OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MRF5S19130HR5

P1-P3P4-P6P7-P9
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
4
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout
MRF5S19130
Rev 5
CUT OUT AREA
V
GG
V
DD
C24C21C20
C19C18
C15
C23C22
C17
C16
C25
C32C31
C30C29
C34C33
C28
C27
C26
C14
C12
C11
C6
C7
C10
B2 R4
C13
C1
C2
C3
C4
C5
C9
R2
R1
B1
R3 C8
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF5S19130HR3 MRF5S19130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
2000
5
15
1900
−60
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance
@ P
out
= 26 Watts Avg.
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, P
out
= 26 W (Avg.), I
DQ
= 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−30
−5
−10
−15
−20
INPUT RETURN LOSS (dB)IRL,
IM3 (dBc), ACPR (dBc)
−25
199019801970196019501940193019201910
14 35
13 30
12 25
11 20
10 −10
9 −20
8 −30
7 −40
6 −50
200
10
16
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
I
DQ
= 1800 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
1500 mA
1200 mA
600 mA
900 mA
15
14
13
12
11
10 100 200
−60
−25
1
I
DQ
= 1800 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10 100
−30
−40
−45
−50
−55
−35
1500 mA
1200 mA
600 mA
900 mA
10
−60
−20
0.1
3rd Order
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)IMD,
1
−25
−30
−35
−40
−45
−50
−55
5th Order
7th Order
45
48
60
35
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
36 37 38 39 40 41 42 43 44
59
58
57
56
55
54
53
52
51
50
49
P3dB = 53.11 dBm (205.57 W)
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
f = 1960 MHz
P1dB = 52.54 dBm (179.61 W)
Actual
Ideal
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
η
D
, DRAIN
EFFICIENCY (%)
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
TYPICAL CHARACTERISTICS
η
D
0
35
1
−65
−30
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG. (N−CDMA)
Figure 8. 2-Carrier N-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
V
DD
= 28 Vdc, I
DQ
= 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
10
30 −35
25 −40
20 −45
15 −50
10 −55
5 −60
220
10
5
10
9
100
Figure 9. MTTF Factor versus Junction Temperature
10
8
10
7
10
6
120 140 160 180 200
MTTF FACTOR (HOURS X AMPS
2
)
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
N- CDMA TEST SIGNAL
f, FREQUENCY (MHz)
−100
0
Figure 10. 2-Carrier N-CDMA Spectrum
−10
−20
−30
−40
−50
−60
−70
−80
−90
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5 4.5
3
0−1.5
−3
−4.5
−6
−7.5
7.5
(dB)
P1-P3P4-P6P7-P9

MRF5S19130HR5

Mfr. #:
Buy MRF5S19130HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV5 28V 26W WCDMA NI880H
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet