BUK9Y11-30B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 August 2007 2 of 12
NXP Semiconductors
BUK9Y11-30B
N-channel TrenchMOS logic level FET
3. Ordering information
4. Limiting values
[1] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by T
j(max)
of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note
AN10273
for further information.
Table 2. Ordering information
Type number Package
Name Description Version
BUK9Y11-30B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage -30V
V
DGR
drain-gate voltage (DC) R
GS
=20kΩ -30V
V
GS
gate-source voltage - ±15 V
I
D
drain current T
mb
=25°C; V
GS
= 5 V; see Figure 2 and 3 -59A
T
mb
= 100 °C; V
GS
= 5 V; see Figure 2 -42A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; see Figure 3 - 239 A
P
tot
total power dissipation T
mb
=25°C; see Figure 1 -75W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
DR
reverse drain current T
mb
=25°C - 59 A
I
DRM
peak reverse drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 239 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source avalanche
energy
unclamped inductive load; I
D
=59A;
V
DS
≤ 30 V; V
GS
=5V; R
GS
= 50 Ω; starting at
T
j
=25°C
- 112 mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
-
[1]
-
