OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9Y11-30B,115

P1-P3P4-P6P7-P9P10-P12P13-P13
BUK9Y11-30B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 August 2007 6 of 12
NXP Semiconductors
BUK9Y11-30B
N-channel TrenchMOS logic level FET
T
j
=25°CT
j
=25°C; I
D
=25A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
V
DS
(V)
0108462
003aab405
80
40
120
160
I
D
(A)
0
10
V
GS
(V) = 2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
515
V
GS
(V)
3151269
003aab407
8
6
10
12
R
DSon
(mΩ)
4
I
D
(A)
0 16012040 80
003aab406
10
20
30
R
DSon
(mΩ)
0
V
GS
(V) = 3 3.2 3.4 3.6
3.8 4
5
10
T
j
(°C)
−60 180120060
003aab851
1
0.5
1.5
2
a
0
a
R
DSon
R
DSon 25°C()
------------------------------
=
BUK9Y11-30B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 August 2007 7 of 12
NXP Semiconductors
BUK9Y11-30B
N-channel TrenchMOS logic level FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=25°C; V
DS
=V
GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
T
j
=25°C; V
DS
=25V V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
T
j
(°C)
−60 180120060
003aab986
1.0
1.5
0.5
2.0
2.5
V
GS(th)
(V)
0.0
min
typ
max
003aab987
V
GS
(V)
0321
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
I
D
(A)
5302515 2010
003aab409
40
50
60
g
fs
(S)
30
V
DS
(V)
10
−1
10
2
101
003aab402
1000
1500
500
2000
2500
C
(pF)
0
C
iss
C
oss
C
rss
BUK9Y11-30B_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 30 August 2007 8 of 12
NXP Semiconductors
BUK9Y11-30B
N-channel TrenchMOS logic level FET
V
DS
= 25 V T
j
=25°C; I
D
=25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
V
GS
= 0 V See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; T
j
=25°C.
(2) Single-pulse; T
j
= 150 °C.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
003aab408
V
GS
(V)
0321
20
30
10
40
50
I
D
(A)
0
T
j
= 175 °C
T
j
= 25 °C
Q
G
(nC)
02015510
003aab404
2
3
1
4
5
V
GS
(V)
0
V
DS
= 14 V
V
DS
= 24 V
V
SD
(V)
0.0 1.00.80.4 0.60.2
003aab403
20
30
10
40
50
I
S
(S)
0
T
j
= 25 °C
T
j
= 175 °C
003aaa850
t
AL
(ms)
10
−3
10110
−2
10
−1
10
10
2
I
AL
(A)
1
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK9Y11-30B,115

Mfr. #:
Buy BUK9Y11-30B,115
Manufacturer:
Nexperia
Description:
MOSFET Trans MOSFET N-CH 30V 59A 5-Pin(4+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet