STGF10NB60SD, STGP10NB60SD Electrical characteristics
Doc ID 11860 Rev 3 5/15
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 480 V, I
C
= 10 A
R
G
=1 kΩ, V
GE
= 15 V
(see Figure 18)
-
0.7
0.46
8
-
µs
µs
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 480 V, I
C
= 10 A
R
G
=1 kΩ, V
GE
= 15 V
(see Figure 18)
-
2.2
1.2
1.2
-µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 480 V, I
C
= 10 A
R
G
=1 kΩ, V
GE
= 15 V,
T
j
= 125 °C
(see Figure 18)
-
3.8
1.2
1.9
-µs
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon
(1)
E
off
(2)
E
ts
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 480 V, I
C
= 10 A
R
G
=1 kΩ, V
GE
= 15 V
(see Figure 18)
-
0.6
5
5.6
-
mJ
mJ
mJ
E
off
(2)
Turn-off switching losses
V
CC
= 480 V, I
C
= 10 A
R
G
=1 kΩ, V
GE
= 15 V,
T
j
= 125 °C
(see Figure 18)
-8-mJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min Typ. Max Unit
V
F
Forward on-voltage
I
F
= 10 A
I
F
= 10 A, T
C
= 125 °C 1.4
2.2 V
V
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 7 A, V
R
= 40 V,
di/dt = 100 A/µs
(see Figure 21)
37
40
2.1
ns
nC
A
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 7 A, V
R
= 40 V,
T
j
= 125 °C,
di/dt = 100 A/µs
(see Figure 21)
61
98
3.2
ns
nC
A
