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STGF10NB60SD

P1-P3P4-P6P7-P9P10-P12P13-P15
STGF10NB60SD, STGP10NB60SD Electrical characteristics
Doc ID 11860 Rev 3 7/15
Figure 8. Normalized breakdown voltage vs.
temperature
Figure 9. Gate charge vs. gate-emitter
voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
Electrical characteristics STGF10NB60SD, STGP10NB60SD
8/15 Doc ID 11860 Rev 3
Figure 14. Thermal impedance for TO-220 Figure 15. Thermal impedance for TO-220FP
Figure 16. Turn-off SOA Figure 17. Forward voltage drop versus
forward current
0
5
10
15
20
25
30
35
40
45
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VFM(V)
Tj=25°C
(Maximum values)
Tj=150°C
(Maximum values)
Tj=150°C
(Typicalvalues)
Tj
IFM(A)
STGF10NB60SD, STGP10NB60SD Test circuits
Doc ID 11860 Rev 3 9/15
3 Test circuits
Figure 18. Test circuit for inductive load
switching
Figure 19. Gate charge test circuit
Figure 20. Switching waveforms Figure 21. Diode recovery times waveform
P1-P3P4-P6P7-P9P10-P12P13-P15

STGF10NB60SD

Mfr. #:
Buy STGF10NB60SD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 10 Amp
Lifecycle:
New from this manufacturer.
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