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NUD3112LT1

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 11
1 Publication Order Number:
NUD3112/D
NUD3112
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps, and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
• Provides a Robust Driver Interface Between D.C. Relay Coil and
Sensitive Logic Circuits
• Optimized to Switch Relays of 12 V Rail
• Capable of Driving Relay Coils Rated up to 6.0 W at 12 V
• Internal Zener Eliminates the Need of Free−Wheeling Diode
• Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
• Low V
DS(ON)
Reduces System Current Drain
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Telecom: Line Cards, Modems, Answering Machines, FAX
• Computers and Office: Photocopiers, Printers, Desktop Computers
• Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
• Industrial: Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
INTERNAL CIRCUIT DIAGRAMS
Drain (3)
1.0 k
300 k
Gate (1)
Source (2)
Drain (6)
1.0 k
300 k
Gate (2)
Source (1)
Drain (3)
1.0 k
300 k
Gate (5)
Source (4)
CASE 318FCASE 318
www.onsemi.com
MARKING DIAGRAMS
SOT−23
CASE 318
STYLE 21
JW5 MG
G
JW5 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
JW5 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
JW5 MG
G
1
2
3
1
6
Device Package Shipping
†
ORDERING INFORMATION
NUD3112LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SZNUD3112LT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
NUD3112DMT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3112DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
NUD3112
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Symbol
Rating Value Unit
V
DSS
Drain to Source Voltage – Continuous 14 V
dc
V
GS
Gate to Source Voltage – Continuous 6 V
dc
I
D
Drain Current – Continuous 500 mA
E
z
Single Pulse Drain−to−Source Avalanche Energy (T
Jinitial
=
25°C)
50 mJ
T
J
Junction Temperature 150 °C
T
A
Operating Ambient Temperature −40 to 85 °C
T
stg
Storage Temperature Range −65 to +150 °C
P
D
Total Power Dissipation (Note 1) SOT−23
Derating Above 25°C
225
1.8
mW
mW/°C
P
D
Total Power Dissipation (Note 1) SC−74
Derating Above 25°C
380
3.0
mW
mW/°C
R
q
JA
Thermal Resistance Junction−to−Ambient (Note 1) SOT−23
SC−74
556
329
°C/W
ESD Human Body Model (HBM) According to EIA/JESD22/A114 2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted onto minimum pad board.
TYPICAL ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol
Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
V
BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
(I
D
= 10 mA)
14 16 17 V
B
VGSO
I
g
= 1.0 mA − − 8 V
I
DSS
Drain to Source Leakage Current
(V
DS
= 12 V , V
GS
= 0 V, T
A
= 25°C)
(V
DS
= 12 V, V
GS
= 0 V, T
A
= 85°C)
−
−
−
−
20
40
mA
I
GSS
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
−
−
−
−
35
65
mA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
A
= 85°C)
0.8
0.8
1.2
−
1.4
1.4
V
R
DS(on)
Drain to Source On−Resistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
A
=85°C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
A
=85°C)
−
−
−
−
−
−
−
−
−
−
1.2
1.3
0.9
1.3
0.9
W
I
DS(on)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
A
= 85°C)
300
200
400
−
−
−
mA
g
FS
Forward Transconductance
(V
OUT
= 12.0 V, I
OUT
= 0.25 A)
350 490 − mmhos
NUD3112
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol UnitMaxTypMinCharacteristic
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
− 23 − pF
C
oss
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
− 30 − pF
C
rss
Transfer Capacitance
(V
DS
= 12.0 V, V
GS
= 0 V, f = 10 kHz)
− 7 − pF
SWITCHING CHARACTERISTICS
Symbol
Characteristic Min Typ Max Units
t
PHL
t
PLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
−
−
21
91
−
−
nS
t
f
t
r
Transition Times:
Fall Time; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
−
−
36
61
−
−
nS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Switching Waveforms
V
out
V
in
0 V
V
OH
V
IH
t
r
t
f
t
PLH
t
PHL
50%
90%
50%
10%
V
OL
P1-P3P4-P6P7-P7

NUD3112LT1

Mfr. #:
Buy NUD3112LT1
Manufacturer:
ON Semiconductor
Description:
MOSFET 12V Industrial Relay
Lifecycle:
New from this manufacturer.
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