Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD60203
Description
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET
®
POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Package
Product Summary
R
ds(on)
150m(max)
V
clamp
50V
I
shutdown
5A
T
on/
T
off
1.5µs
8-Lead SOIC
IPS022G
(Dual)
www.irf.com 1
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS022G
2 www.irf.com
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
Ambient
= 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
V
ds
Maximum drain to source voltage 47
V
in
Maximum input voltage -0.3 7
I
in, max
Maximum IN current -10 +10 mA
I
sd cont.
Diode max. continuous current
(1)
(
lsd mosfets, rth=125
o
C/W) 1.4
I
sd pulsed
Diode max. pulsed current
(1)
(for ea. mosfet)
—10
P
d Maximum power dissipation
(1)
(
Pd mosfets, rth=125
o
C/W) 1 W
ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0Ω, L=10µH
T
stor.
Max. storage temperature -55
150
T
j
max. Max. junction temperature -40
+150
V
A
kV
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th1
Thermal resistance with standard footprint
(2 mos on) (2 mosfets on)
100
R
th2
Thermal resistance
with standard footprint
(1 mos on) (1 mosfet on)
127
R
th3
Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on)
—60
Thermal Characteristics
o
C/W
o
C
IPS022G
www.irf.com 3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
ds
(max)
Continuous drain to source voltage
35
V
IH
High level input voltage 4 6
V
IL
Low level input voltage
0 0.5
I
ds
Continuous drain current
(
TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 85
o
C) 1 A
R
in
Recommended resistor in series with IN pin 0.5
5 k
T
r-in (max)
Max recommended rise time for IN signal (see fig. 2) 1
µ
S
F
r
-I
sc
(2)
Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
V
(2) Operations at higher switching frequencies is possible. See Appl. notes.
Switching Electrical Characteristics
V
cc
= 14V, Resistive Load = 10, Rinput = 50Ω, 100µs
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter Min. Typ. Max. Units Test Conditions
T
on
Turn-on delay time
0.15
0.5
1
T
r
Rise time
0.4
0.9
2
T
rf
Time to 130% final R
ds(on)
2
6
12
T
off
Turn-off delay time
0.8
2
3.5
T
f
Fall time
0.5
1.3
2.5
Q
in
Total gate charge
3.3
nC V
in
= 5V
See figure 2
See figure 2
µs
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
ds(on)
ON state resistance T
j
= 25
o
C 100 130 150
T
j
= 150
o
C 220 280
I
dss 1
Drain to source leakage current 0 0.01 25 V
cc
= 14V,
T
j
= 25
o
C
I
dss 2
Drain to source leakage current 0 0.1 50 V
cc
= 40V,
T
j
= 25
o
C
V clamp 1
Drain to source clamp voltage 1
48 54
56
I
d
= 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2 50
56 60
V
in
clamp IN to source clamp voltage
7 8 9.5
I
in
= 1 mA
V
th
IN threshold voltage 1 1.5 2
I
d
=
50mA,
V
ds
= 14V
I
in
,
-on
ON state IN positive current
25 90
200 V
in
= 5V
I
in, -off
OFF state IN positive current
50 130
250 V
in
= 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70 µm copper thickness. (T
j
= 25
o
C unless otherwise specified.)
m
V
in
= 5V, I
ds
= 1A
I
d
=I
shutdown
(see Fig.3 & 4)
V
µA
µA

IPS022G

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Gate Drivers IPS Dual Ch Low Side Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet