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IPS022G
P1-P3
P4-P6
P7-P9
P10-P10
IPS022G
4
www
.irf.com
Symbol
Parameter
Min.
T
yp.
Max.
Units
Te
s
t
Condition
s
T
sd
Over temperature threshold
—
1
6
5
—
o
C
See fig. 1
I
sd
Over current threshold
4
5.5
7
A
See fig.
1
V
reset
IN protection reset threshold
1
.
5
2
.3
3
V
T
reset
Time to reset protection
2
10
40
µ
s V
in
= 0V, Tj = 25
o
C
EOI_OT
Short
circuit energy (see application note)
—
400
—
µ
JV
cc
= 14V
Protection Characteristics
Lead Assignments
Part Number
8 Lead SOIC
(Dual)
IPS022G
Functional Block Diagram
All values are typical
IN
DRA
IN
SOU
RCE
8.1 V
80
µ
A
47 V
I se
ns
e
200 k
Ω
1000
Ω
S
Q
R
Q
T >
165°c
I > Isd
1
S1 In
1 S2 In2
D1
D1 D
2 D2
IPS022G
www
.irf.com
5
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td o
n
Td o
ff
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 °c)
Vin
Ids
Isd
I sh
utdown
T
T sh
ut
down
t <
T r
eset
t >
T r
eset
5 V
0 V
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V loa
d
Rem : V lo
ad
is n
ega
tiv
e
during d
emagn
etizatio
n
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clam
p
Vds cla
m
p
(
Vcc
)
(
see App
l . N
ote
s t
o eval
uat
e pow
er di
ssi
pation
)
Figure 3 - Active clamp waveforms
IPS022G
6
www
.irf.com
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
Figure 6 - Normalized Rds(on) (%) Vs Tj (
o
C)
Figure 5 - Rds ON (m
Ω
) Vs Input Voltage (V)
Tj = 150
o
C
Tj = 25
o
C
0
50
100
150
200
250
300
012
3456
78
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
200%
-
50
-
25
0
25
50
75
100
125
150
175
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds
(on)
(us) Vs Input Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
01
23
45
67
8
ton de
la
y
ri
se
ti
m
e
130% r
ds
o
n
0
1
2
3
4
012
3456
78
toff de
l
ay
fa
l
l
ti
m
e
P1-P3
P4-P6
P7-P9
P10-P10
IPS022G
Mfr. #:
Buy IPS022G
Manufacturer:
Infineon / IR
Description:
Gate Drivers IPS Dual Ch Low Side Driver
Lifecycle:
New from this manufacturer.
Delivery:
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