ZXMN3A02X8
ISSUE 1 - JANUARY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
µA
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100 nA
V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1V
I
D
=250µA, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.025
0.035
Ω
Ω
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10.2A
Forward Transconductance (1)(3)
g
fs
22 S
V
DS
=10V,I
D
=12A
DYNAMIC (3)
Input Capacitance
C
iss
1400 pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
209 pF
Reverse Transfer Capacitance
C
rss
120 pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.9 ns
V
DD
=15V, I
D
=5.5A
R
G
=6.2Ω,V
GS
=10V
(refer to test circuit)
Rise Time
t
r
5.5 ns
Turn-Off Delay Time
t
d(off)
35.0 ns
Fall Time
t
f
7.6 ns
Gate Charge
Q
g
14.5 nC
V
DS
=15V,V
GS
=5V,
I
D=5.5A
(refer to test circuit)
Total Gate Charge
Q
g
26.8 nC
V
DS
=15V,V
GS
=10V,
I
D
=5.5A
(refer to test circuit)
Gate-Source Charge
Q
gs
4.7 nC
Gate-Drain Charge
Q
gd
4.7 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95 V
T
J
=25°C, I
S
=9A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
17 ns
T
J
=25°C, I
F
=5.5A,
di/dt= 100A/µs
Reverse Recovery Charge (3)
Q
rr
8.3 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
