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NTB5405NT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1 Publication Order Number:
NTB5405N/D
NTB5405N, NVB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D
2
PAK
Features
• Low R
DS(on)
• High Current Capability
• Low Gate Charge
• AEC−Q101 Qualified and PPAP Capable − NVB5405N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current − R
JC
Steady
State
T
C
= 25°C
I
D
116
A
T
C
= 100°C 82
Power Dissipation −
R
JC
Steady
State
T
C
= 25°C
P
D
150 W
Continuous Drain
Current − R
JA
(Note 1
)
Steady
State
T
A
= 25°C I
D
16.5
A
T
A
= 100°C I
D
11.6
Power Dissipation −
R
JA
(Note 1)
Steady
State
T
A
= 25°C P
D
3.0 W
Pulsed Drain Current
t
p
= 10 s
I
DM
280 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
175
°C
Source Current (Body Diode) Pulsed I
S
75 A
Single Pulse Drain−to Source Avalanche
Energy − (V
DD
= 50 V, V
GS
= 10 V, I
PK
= 40 A,
L = 1 mH, R
G
= 25 )
EAS 800 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) R
θ
JC
1.0 °C/W
Junction−to−Ambient (Note 1) R
θ
JA
50 °C/W
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
MARKING
DIAGRAM
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
40 V 4.9 mΩ @ 10 V 116 A
D
2
PAK
CASE 418B
STYLE 2
N−Channel
D
S
G
1
2
3
NTB5405NG
AYWW
NTB5405N = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
1
Device Package Shipping†
ORDERING INFORMATION
NTB5405NG D
2
PAK
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTB5405NT4G D
2
PAK
(Pb−Free)
800 / Tape & Ree
l
NVB5405NT4G D
2
PAK
(Pb−Free)
800 / Tape & Ree
l
NTB5405N, NVB5405N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
39 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 1.0 A
T
J
= 100°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±30 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5 3.5 V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−7.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 40 A 4.9 5.8 m
V
GS
= 5.0 V, I
D
= 15 A 7.0 8.0
Forward Transconductance g
FS
V
GS
= 10 V, I
D
= 15 A 32 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 32 V
2700 4000 pF
Output Capacitance C
OSS
700 1400
Reverse Transfer Capacitance C
RSS
300 600
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 40 A
88
nC
Threshold Gate Charge Q
G(TH)
3.25
Gate−to−Source Charge Q
GS
9.5
Gate−to−Drain Charge Q
GD
37
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 32 V,
I
D
= 40 A, R
G
= 2.5
8.5
ns
Rise Time t
r
52
Turn−Off Delay Time t
d(OFF)
55
Fall Time t
f
70
SWITCHING CHARACTERISTICS, V
GS
= 5 V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 5 V, V
DD
= 20 V,
I
D
= 20 A, R
G
= 2.5
19
ns
Rise Time t
r
153
Turn−Off Delay Time t
d(OFF)
32
Fall Time t
f
42
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.82 1.1
V
T
J
= 100°C TBD
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/s,
I
S
= 20 A
66
ns
Charge Time t
a
35
Discharge Time t
b
31
Reverse Recovery Charge Q
RR
113 nC
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTB5405N, NVB5405N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
0
25
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0
Figure 1. On−Region Characteristics
3
25
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
2
1
0.8
0.6
50 175
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
75
T
J
= 25°C
I
D
= 40 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
V
GS
= 10 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
4 V
4.5 V
V
GS
= 5 V
V
DS
≥ 10 V
3.5 V
4
V
GS
= 6 V to 10 V
50
125100
5
10
0.008
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.004
0.005
0.006
0.01
36
0.003
4
0.006
0.002
0.01
0.004
0.003
0.005
610
12
25 11
5
35 45
1.8
50
4
0.007
86555
175
75
I
D
= 40 A
T
J
= 25°C
8
5.5 V
759
0.009
0.007
0.008
0.009
10515 75 85 95
1.6
1.4
1.2
150
13 759
75
150
125
100
5 V
8
670
100
125
200
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
15 35 4
0
1000
20
100
302510
10000
100000
T
J
= 175°C
P1-P3P4-P6P7-P7

NTB5405NT4G

Mfr. #:
Buy NTB5405NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 40V 116A PB
Lifecycle:
New from this manufacturer.
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