IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
g
fs
I
C
= I
C110
, V
CE
= 10 V 18 28 S
Pulse test, t < 300 μs, duty cycle < 2 %
C
ies
1790 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 146 pF
C
res
49 pF
Q
g
89 nC
Q
ge
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15 nC
Q
gc
34 nC
t
d(on)
20 ns
t
ri
22 ns
t
d(off)
260 400 ns
t
fi
150 ns
E
off
2.2 4.5 mJ
t
d(on)
20 ns
t
ri
22 ns
E
on
3.8 mJ
t
d(off)
360 ns
t
fi
330 ns
E
off
5.75 mJ
R
thJC
0.42 K/W
R
thCS
(TO-247) 0.25 K/W
Inductive load, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15 V
V
CE
= 720 V, R
G
= R
off
= 5 Ω
Inductive load, T
J
= 125°C
I
C
= I
C110
A, V
GE
= 15 V
V
CE
= 720 V, R
G
= R
off
= 5 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Ultrafast Diode
Symbol Conditions Maximum Ratings
I
F110
T
C
= 110°C 27 A
Symbol Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
V
F
I
F
= 30 A; 2.75 V
T
VJ
= 125°C 1.9 V
I
RM
I
F
= 50 A; di
F
/dt = -100 A/μs; T
VJ
= 100°C 5.5 11.4 A
t
rr
V
R
= 100 V; V
GE
= 0 V 190 ns
R
thJC
0.9 K/W
R
thCS
0.25 K/W
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
