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IXGT32N90B2D1

P1-P3P4-P6P7-P7
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 20 40 60 80 100
I
C
- Amperes
g
f s
- Siemens
T
J
=
-40
º
C
25
º
C
12 5
º
C
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 450V
I
C
= 32A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 10. Reverse -Bias Safe
Operating Ar e a
0
10
20
30
40
50
60
70
100 200 300 400 500 600 700 800 900
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 11. Maxim um Transient Thermal Resistance
0.01
0.1
1
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
© 2005 IXYS All rights reserved
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
0
2
4
6
8
10
12
14
16
10 20 30 40 50 60 70
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 16. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- MilliJoule
s
I
C
= 64A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
o f f
- MilliJoules
I
C
= 64A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
R
G
- Ohms
E
o n
- MilliJoule
s
I
C
= 64A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
0
1
2
3
4
5
6
7
8
9
10 20 30 40 50 60 70
I
C
- Amperes
E
o n
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 17. Dependence of Turn-on
Energy Loss on Temperature
0
1
2
3
4
5
6
7
8
9
10
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o n
- MilliJoules
I
C
= 64A
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 18. Dependence of Turn-off
Switching Time on Gate Resistance
350
375
400
425
450
475
500
525
550
4 6 8101214161820
R
G
- Ohms
t
d ( o f f )
-
Nanoseconds
320
330
340
350
360
370
380
390
400
t
f i
-
Nanoseconds
t
d(off)
t
fi
- - - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 720V
I
C
= 32A, 16A
I
C
= 16A, 32A, 64A
Fig. 20. Dependence of Turn-off
Sw itching Time
on Collector Current
100
150
200
250
300
350
400
450
500
15 20 25 30 35 40 45 50 55 60 65
I
C
- Amperes
t
d ( o f f )
/
t
f i
- Nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5 Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 22. Dependence of Turn-off
Switching Time on Temperature
100
150
200
250
300
350
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
d ( o f f )
/
t
f i
- Nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 720V
I
C
= 64A, 32A, 16A
I
C
= 64A, 32A, 16A
Fig. 19. Dependence of Turn-on
Switching Time on Gate Resistance
15
20
25
30
35
40
45
468101214161820
R
G
- Ohms
t
d ( o n )
-
Nanoseconds
0
30
60
90
120
150
180
t
r i
-
Nanoseconds
t
d(on)
t
ri
- - - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 16A
I
C
= 64A
Fig. 21. Dependence of Turn-on
Sw itching Time
on Collector Current
10
12
14
16
18
20
22
24
26
28
30
10 20 30 40 50 60 70
I
C
- Amperes
t
d ( o n )
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
10 0
t
r i
- Nanoseconds
t
d(on)
t
ri
- - - -
R
G
= 5 Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 23. Dependence of Turn-on
Switching Time on Temperature
10
15
20
25
30
35
40
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
d ( o n )
- Nanoseconds
0
25
50
75
10 0
12 5
15 0
t
r i
- Nanoseconds
t
d(on)
t
ri
- - - - -
R
G
= 5 Ω , V
GE
= 15V
V
CE
= 720V
I
C
= 32A
I
C
= 64A
I
C
= 1 6A
P1-P3P4-P6P7-P7

IXGT32N90B2D1

Mfr. #:
Buy IXGT32N90B2D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 32 Amps 900V 2.7 Rds
Lifecycle:
New from this manufacturer.
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