NGTB50N60L2WG
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.28 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
0.62 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
600 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 50 A, T
J
= 175°C
V
CEsat
1.30
−
1.50
1.85
1.80
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 350 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
=
175°C
I
CES
−
−
−
1.0
0.1
4.0
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 7500 −
pF
Output capacitance C
oes
− 300 −
Reverse transfer capacitance C
res
− 190 −
Gate charge total
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
Q
g
− 310 −
nC
Gate to emitter charge Q
ge
− 60 −
Gate to collector charge Q
gc
− 150 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15 V
t
d(on)
− 110 −
ns
Rise time t
r
− 48 −
Turn−off delay time t
d(off)
− 270 −
Fall time t
f
− 70 −
Turn−on switching loss E
on
− 1.25 −
mJ
Turn−off switching loss E
off
− 0.6 −
Total switching loss E
ts
− 1.85 −
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15 V
t
d(on)
− 115 −
ns
Rise time t
r
− 50 −
Turn−off delay time t
d(off)
− 280 −
Fall time t
f
− 100 −
Turn−on switching loss E
on
− 1.6 −
mJ
Turn−off switching loss E
off
− 1.0 −
Total switching loss E
ts
− 2.6 −
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 50 A
V
GE
= 0 V, I
F
= 50 A, T
J
= 175°C
V
F
1.40
−
1.70
2.40
2.50
−
V
Reverse recovery time
T
J
= 25°C
I
F
= 50 A, V
R
= 200 V
di
F
/dt = 200 A/ms
t
rr
− 67 − ns
Reverse recovery charge Q
rr
− 0.30 −
mC
Reverse recovery current I
rrm
− 7.4 − A
Reverse recovery time
T
J
= 175°C
I
F
= 50 A, V
R
= 400 V
di
F
/dt = 200 A/ms
t
rr
− 143 − ns
Reverse recovery charge Q
rr
− 1.40 −
mC
Reverse recovery current I
rrm
− 15 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
