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NGTB50N60L2WG

P1-P3P4-P6P7-P9P10-P11
NGTB50N60L2WG
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 23. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.0001
1
SQUARE−WAVE PEAK R(t) (°C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.282
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.026955 0.003710
0.024252
0.022476
0.055395
0.112157
0.040934
0.013039
0.044492
0.057085
0.089161
0.772537
0.000001
Figure 24. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
1
R
q
JC
= 0.622
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
10.10.010.00010.000001 0.00001 0.001
R
i
(°C/W) C
i
(J/°C)
0.0001250.007983
0.1
0.01
0.001
0.010584
0.011330
0.026752
0.047379
0.103276
0.061288
0.065591
0.134666
0.152791
0.000945
0.002791
0.003738
0.006674
0.009683
0.051597
0.152460
0.234823
0.654488
NGTB50N60L2WG
www.onsemi.com
8
Figure 25. Test Circuit for Switching Characteristics
NGTB50N60L2WG
www.onsemi.com
9
Figure 26. Definition of Turn On Waveform
P1-P3P4-P6P7-P9P10-P11

NGTB50N60L2WG

Mfr. #:
Buy NGTB50N60L2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V/50A LOW VCESAT FSII
Lifecycle:
New from this manufacturer.
Delivery:
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