January 2007 Rev 4 1/14
14
STD95N04
STP95N04
N-channel 40V - 5.4m - 80A - DPAK - TO-220
STripFET™ Power MOSFET
General features
Standard threshold drive
100% avalanche tested
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge
.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
Pw
STD95N04 40V <6.5m 80A 110W
STP95N04 40V <6.5m 80A 110W
1
3
1
2
3
DPAK
TO-220
www.st.com
Order codes
Part number Marking Package Packaging
STD95N04 D95N04 DPAK Tape & reel
STP95N04 P95N04 TO-220 Tube
Contents STD95N04 - STP95N04
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD95N04 - STP95N04 Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
=0)
40 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C
80 A
I
D
Drain current (continuous) at T
C
= 100°C
65 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25°C
110 W
Derating factor 0.73 W/°C
dv/dt
(3)
3. I
SD
< 80 A, di/dt < 400A/µs, V
DS
< V
(BR)DSS
, Tj < Tjmax
Peak diode recovery voltage slope 8 V/ns
E
AS
(4)
4. Starting Tj = 25°C, I
D
= 40A, V
DD
= 30V
Single pulse avalanche energy 400 mJ
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal resistance
Symbol Parameter
Value
Unit
TO-220 DPAK
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-a Thermal resistance junction-ambient max 62.5 -- °C/W
Rthj-pcb
(1)
1. When mounted on 1inch² FR-4 2Oz Cu board
Thermal resistance junction-ambient max -- 50 °C/W
T
l
Maximum lead temperature for soldering purpose 300 -- °C

STD95N04

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 40V 80A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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