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STD95N04

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STD95N04 - STP95N04
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
40 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc = 125°C
10
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±200 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
24V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A
5.4 6.5 mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
V
DS
=25V, I
D
=40A
100 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
2200
580
40
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=20V, I
D
= 80A
V
GS
=10V
(see Figure 13)
40
11
8
54 nC
nC
nC
STD95N04 - STP95N04 Electrical characteristics
5/14
Table 5. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=20V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 15)
15
50
ns
ns
t
d(off)
t
f
Turn-off delay time
Falltime
V
DD
=20V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 15)
40
15
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
=80A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=80A,
di/dt = 100A/µs,
V
DD
=30V, Tj=150°C
(see Figure 14)
45
60
2.8
ns
nC
A
Electrical characteristics STD95N04 - STP95N04
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature
P1-P3P4-P6P7-P9P10-P12P13-P14

STD95N04

Mfr. #:
Buy STD95N04
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 40V 80A DPAK
Lifecycle:
New from this manufacturer.
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