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BUK7609-75A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
3 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
Fig 1.
Normalized continuous drain cu
rrent as a
function of mou
nting base temperature
Fig 2.
Normalized total power dissi
pation as a
function of mounting ba
se temperature
Fig 3.
Safe operating area; co
ntinuous and peak drain
currents as a function of drain-source
voltage
T
mb
(
°
C)
0
200
150
50
100
03aa24
40
80
120
I
der
(%)
0
T
mb
(
°
C)
0
200
150
50
100
03na19
40
80
120
P
der
(%)
0
03nb54
V
DS
(V)
1
10
2
10
10
2
10
10
3
I
D
(A)
1
t
p
t
p
T
P
t
T
δ
=
R
DSon
= V
DS
/I
D
t
p
= 10 us
100 ms
10 ms
1 ms
100 us
D.C.
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
4 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
5.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
R
th(j-mb)
thermal resistance from
junction to mounting base
see
Figure 4
--0
.
6
5
K
/
W
R
th(j-a)
thermal resistance from
junction to ambient
mounted on a p
rinted-circuit board;
minimum footprint
-5
0
-K
/
W
Fig 4.
Transien
t thermal impedance from junctio
n to mounting base as a fu
nction of pulse duration
03nb55
t
p
(s)
10
−
6
10
−
1
1
10
−
2
10
−
3
10
−
5
10
−
4
10
−
1
10
−
2
1
Z
th(j-mb)
(K/W)
10
−
3
Single Shot
0.2
0.1
0.05
0.02
δ
= 0.5
t
p
t
p
T
P
t
T
δ
=
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
5 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
6.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
St
atic c
haracteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
= -55 °C
70
-
-
V
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
=
2
5
°
C
7
5
--V
V
GS(th)
gate-source threshold
voltage
I
D
=1m
A
;
V
DS
=V
GS
; T
j
= 175 °C;
see
Figure 10
1
--V
I
D
=1m
A
;
V
DS
=V
GS
; T
j
=2
5°
C
;
see
Figure 10
234V
I
D
=1m
A
;
V
DS
=V
GS
; T
j
=-
5
5°
C
;
see
Figure 10
--4
.
4
V
I
DSS
drain leakage current
V
DS
=7
5V
;
V
GS
=0V
;
T
j
= 175 °C
-
-
500
µA
V
DS
=7
5V
;
V
GS
=0V
;
T
j
= 25 °C
-
0.05
10
µA
I
GSS
gate leakage current
V
GS
=2
0V
;
V
DS
=0V
;
T
j
= 25 °C
-
2
100
nA
V
GS
=-
2
0V
;
V
DS
=0V
;
T
j
= 25 °C
-
2
100
nA
R
DSon
drain-source on-state
resistance
V
GS
=1
0V
;
I
D
=2
5A
;
T
j
= 175 °C;
see
Figure 1
1
; see
Figure 12
-
-
18.9
m
Ω
V
GS
=1
0V
;
I
D
=2
5A
;
T
j
=2
5°
C
;
see
Figure 1
1
; see
Figure 12
-7
.
7
9
m
Ω
Dynamic ch
aracteristics
C
iss
input capacitance
V
GS
=0V
;
V
DS
=2
5V
;
f=1M
H
z
;
T
j
=2
5°
C
;
s
e
e
Figure 13
-
5068
6760
pF
C
oss
output capacitance
-
1082
130
0
pF
C
rss
reverse transfer
capacit
ance
V
GS
=0V
;
V
DS
25 V
;
f = 1 MHz;
T
j
=2
5°
C
;
s
e
e
Figure 13
-
620
850
pF
t
d(on)
turn-on delay time
V
DS
=3
0V
;
R
L
=1
.
2
Ω
; V
GS
=1
0V
;
R
G(ext)
=1
0
Ω
; T
j
=2
5°
C
-3
5
-n
s
t
r
rise time
-
107
-
ns
t
d(off
)
turn-off delay time
-
183
-
ns
t
f
fall time
-
100
-
ns
L
D
internal drain
inductance
from upper edge of drain mounting base
to centre of die; T
j
=2
5°
C
-2
.
5
-n
H
from drain lead 6
mm from package to
centre of die; T
j
=2
5°
C
-4
.
5
-n
H
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=2
5°
C
-7
.
5
-n
H
Source-drain diod
e
V
SD
source-drain voltage
I
S
=2
5A
;
V
GS
=0V
;
T
j
=2
5°
C
;
see
Figure 14
-
0.85
1.2
V
t
rr
reverse recovery time
I
S
=2
0A
;
d
I
S
/dt = -100 A/µs;
V
GS
=-
1
0V
;
V
DS
=3
0V
;
T
j
=2
5°
C
-7
5
-n
s
Q
r
recovered charge
-
270
-
nC
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7609-75A,118
Mfr. #:
Buy BUK7609-75A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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BUK7609-75A,118