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BUK7609-75A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
6 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Sub-threshold
drain current as a function of
gate-source voltage
Fig 7.
Forward transco
nductance as a fun
ction of
drain cu
rrent; typical valu
es
Fig 8.
Transfer char
acteristics: drain curre
nt as a
function of gate-s
ource voltage; typical values
03nb51
0
50
100
150
200
250
300
350
400
0246
8
1
0
V
DS
(V)
I
D
(A)
5.5
6.5
8.5
9.5
20
16
12
10
7.5
4.5
V
GS
(V) =
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03nb48
10
20
30
40
50
60
70
80
0
2
04
06
08
0
I
D
(A)
g
fs
(S)
03nb49
0
10
20
30
40
50
60
70
80
90
100
110
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
7 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
Fig 9.
Gate-source voltag
e as a function of turn-on
gate charge; typical values
Fig 10.
Gate-source threshold voltage as a func
tion of
junction tempe
rature
Fig 11.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 12.
Normalized drain-sou
rce on-state resistance
factor as a function of junction temperature
03nb47
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
Q
G
(nC)
V
GS
(V)
V
DD
= 60 V
V
DD
= 14 V
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nb52
6
8
10
12
14
16
18
0
40
80
120
160
200
240
280
320
360
I
D
(A)
R
DSon
(m
Ω
)
5.5
6
6.5
8
9
10
V
GS
(V) =
7
T
j
(
°
C)
−
60
180
120
06
0
03nb25
0.8
1.6
2.4
a
0
BUK7609-75A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 03 — 18 February 201
1
8 of 13
NXP Semiconductors
BUK7609-75A
N-channel T
renchMOS st
andard level FET
Fig 13.
Input, output and reverse cap
acitances as a
function of drain-source voltage; typica
l values
Fig 14.
Reverse diode curre
nt as a function of reverse
diode voltage; typical valu
es
03nb53
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0.01
0.1
1
10
100
V
DS
(V)
C (pF)
Crss
Coss
Ciss
03nb46
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(V)
I
S
(A)
T
j
= 175
°
CT
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7609-75A,118
Mfr. #:
Buy BUK7609-75A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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BUK7609-75A,118