STW11NK100Z Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 1000 V
V
DGR
Drain-gate voltage (R
GS
= 20KΩ) 1000 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 8.3 A
I
D
Drain current (continuous) at T
C
=100°C 5.2 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 33.2 A
P
TOT
Total dissipation at T
C
= 25°C 230 W
Derating Factor 1.85 W/°C
V
ESD (G-S)
Gate source ESD(HBM-C=100pF, R=1,5KΩ) 6000 V
dv/dt
(2)
2. I
SD
≤ 8.3 A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 4.5 V/ns
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case Max 0.54 °C/W
R
thj-a
Thermal resistance junction-ambient Max 50 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
8.3 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
550 mJ
