OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STW11NK100Z

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical ratings STW11NK100Z
4/14
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 0 V
STW11NK100Z Electrical characteristics
5/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0 1000 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125°C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 4.15 A 1.1 1.38 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=15V, I
D
= 4.15A 9 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
3500
270
60
pF
pF
pF
C
osseq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 500V 170 pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
V
DD
=800 V, I
D
= 8A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
27
18
98
55
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=800V, I
D
= 8A
V
GS
=10V
113
18
60
162 nC
nC
nC
Electrical characteristics STW11NK100Z
6/14
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 8.3 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 33.2 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
=8.3A, V
GS
=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=8.3,
di/dt = 100A/µs,
V
DD
=80V, Tj=25°C
(see Figure 18)
560
4.48
16
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=8A,
di/dt = 100A/µs,
V
DD
=80V, Tj=150°C
(see Figure 18)
620
4.57
16
ns
µC
A
P1-P3P4-P6P7-P9P10-P12P13-P14

STW11NK100Z

Mfr. #:
Buy STW11NK100Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet