STWA70N60DM2 Electrical ratings
DocID027892 Rev 2 3/12
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ±25 V
I
D
Drain current (continuous) at T
case
= 25 °C 66
A
Drain current (continuous) at T
case
= 100 °C 42
I
DM
(1)
Drain current (pulsed) 264 A
P
TOT
Total dissipation at T
case
= 25 °C 446 W
dv/dt
(2)
Peak diode recovery voltage slope 50
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness 50
T
stg
Storage temperature
-55 to 150 °C
T
j
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
$GLGW $ȝV9
DS
peak < V
(BR)DSS
, V
DD
= 400 V.
(3)
V
DS
9
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 0.28
°C/W
R
thj-amb
Thermal resistance junction-ambient 50
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (Pulse width limited by T
jmax
) 10 A
E
AR
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V) 1500 mJ
