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STWA70N60DM2

P1-P3P4-P6P7-P9P10-P12
STWA70N60DM2 Electrical characteristics
DocID027892 Rev 2 7/12
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits STWA70N60DM2
8/12 DocID027892 Rev 2
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STWA70N60DM2 Package information
DocID027892 Rev 2 9/12
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 TO-247 long leads package information
Figure 20: TO-247 long leads package outline
8463846_A_F
P1-P3P4-P6P7-P9P10-P12

STWA70N60DM2

Mfr. #:
Buy STWA70N60DM2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CHANNEL 600V 66A TO247
Lifecycle:
New from this manufacturer.
Delivery:
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