N0118GA,412 Datasheet N0118GA,412, N0118GA,116, N0118GAML | P1-P3

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

WWW - For www.nxp.com use www.ween-semi.com

Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com

For the copyright notice at the bottom of each page (or elsewhere in the document, depending

on the version) “

WeEn

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

N0118GA

SCR

28 September 2016 Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic

package.

2. Features and benefits

• High voltage capability

• Planar passivated for voltage ruggedness and reliability

• Ultra sensitive gate

3. Applications

• Electronic ballasts

• Safety shut down and protection circuits

• Sensing circuits

• Smoke detectors

• Switched Mode Power Supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

DRM

repetitive peak off-

state voltage

- - 600 V

RRM

repetitive peak reverse

voltage

- - 600 V

half sine wave; T

j(init)

= 25 °C;

= 10 ms; Fig. 4; Fig. 5

- - 8 AI

TSM

non-repetitive peak on-

state current

half sine wave; T

j(init)

= 25 °C;

= 8.3 ms

- - 9 A

junction temperature - - 125 °C

T(AV)

average on-state

current

half sine wave; T

lead

≤ 67 °C; Fig. 1 - - 0.51 A

T(RMS)

RMS on-state current half sine wave; T

lead

≤ 67 °C; Fig. 2;

Fig. 3

- - 0.8 A

Static characteristics

gate trigger current V

= 12 V; I

= 10 mA; T

= 25 °C;

Fig. 7

0.5 - 7 µA

Dynamic characteristics

WeEn Semiconductors

N0118GA

SCR

N0118GA All information provided in this document is subject to legal disclaimers.

Product data sheet 28 September 2016 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

/dt rate of rise of off-state

voltage

= 402 V; T

= 125 °C; R

= 1 kΩ;

= 67% of V

DRM

); exponential

waveform; Fig. 13; Fig. 14

75 - - V/µs

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 A anode

2 G gate

3 K cathode

123

TO-92 (SOT54)

sym037

A K

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

N0118GA TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

N0118GA,412

Mfr. #:

Buy N0118GA,412

Manufacturer:

WeEn Semiconductors

Description:

SCRs SCR

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

N0118GA,412

N0118GA,412

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