Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
N0118GA,412
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
WeEn Semiconductors
N0118GA
SCR
N0118GA
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance
from junction to lead
Fig. 6
-
-
60
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted: lead
length = 4 mm
-
150
-
K/W
001aab451
1
10
2
10
-1
10
Z
th(j-lead)
(K/W)
10
-2
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
t
p
P
t
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
N0118GA
SCR
N0118GA
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
7 / 13
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
0.5
-
7
µA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
Fig. 8
-
-
6
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
;
Fig. 10
-
-
5
mA
V
T
on-state voltage
I
T
= 1.6 A; T
j
= 25 °C;
Fig. 11
-
1.4
1.95
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 12
-
-
0.8
V
V
D
= 400 V; T
j
= 25 °C
-
-
10
µA
I
D
off-state current
V
D
= 600 V; R
GK(ext)
= 1 kΩ; T
j
= 125 °C
-
-
100
µA
V
R
= 600 V; T
j
= 25 °C; R
GK(ext)
= 1 kΩ
-
-
10
µA
I
R
reverse current
V
R
= 600 V; T
j
= 125 °C; R
GK(ext)
= 1 kΩ
-
-
100
µA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 1 kΩ;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 13
;
Fig. 14
75
-
-
V/µs
T
j
(°C)
-50
150
100
0
50
003aag291
1.0
1.5
0.5
2.0
2.5
I
GT
I
GT(25°C)
0
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aag292
0.8
1.2
1.6
I
L
I
L(25°C)
0.4
R
GK
= 1 kΩ
Fig. 8. Normalized latching current as a function of
junction temperature
WeEn Semiconductors
N0118GA
SCR
N0118GA
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
28 September 2016
8 / 13
T
j
(°C)
-50
150
100
0
50
003aag293
0.8
1.2
1.6
I
H
I
H(25°C)
0.4
R
GK
= 1 kΩ
Fig. 9. Normalized holding current as a function of
junction temperature
R
GK
10
10
4
10
3
10
2
003aag294
8
12
4
16
20
A
B
0
A = I
H
[R
GK
]
B = I
H
[R
GK
= 1 kΩ]
T
j
= 25 °C
Fig. 10. Normalized holding current as a function of
gate-cathode resistance (typical values)
003aag284
V
T
(V)
0
3
2
1
2
1
3
4
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.383 V; R
s
= 0.4 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 11. On-state current as a function of on-state
voltage
T
j
(°C)
-50
150
100
0
50
003aag290
0.9
1.0
0.8
1.1
1.2
V
GT
V
GT(25°C)
0.7
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
N0118GA,412
Mfr. #:
Buy N0118GA,412
Manufacturer:
WeEn Semiconductors
Description:
SCRs SCR
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
N0118GA,412
N0118GA,116
N0118GAML
