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P5P2309AF-1H16SR

P1-P3P4-P6P7-P9P10-P12
ASM5P2305A, ASM5P2309A
http://onsemi.com
4
Table 4. ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Max Unit
−0.5
+4.6
V
DC Input Voltage (Except REF)
−0.5
V
DD
+ 0.5
V
DC Input Voltage (REF)
−0.5
7
V
Storage Temperature
−65
+150 °C
Max. Soldering Temperature (10 sec)
260 °C
Junction Temperature
150 °C
2000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 5. OPERATING CONDITIONS (for ASM5P2305A (−1, −1H) and ASM5P2309A (−1, −1H))
Parameter
Description
Min
Max Unit
V
DD
Supply Voltage 3.0 3.6
V
T
A
Operating Temperature
(Ambient Temperature)
Commercial temperature
0
70
°C
Industrial temperature −40 85
C
L
Load Capacitance, below 100 MHz
30
pF
Load Capacitance, from 100 MHz to 133 MHz
10
pF
C
IN
Input Capacitance
7
pF
Table 6. ELECTRICAL CHARACTERISTICS (for ASM5P2305A (−1, −1H) and ASM5P2309A (−1, −1H))
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
V
IL
Input LOW Voltage (Note 5)
0.8
V
V
IH
Input HIGH Voltage (Note 5)
2.2
V
I
IL
Input LOW Current
V
IN
= 0 V
50
�
A
I
IH
Input HIGH Current
V
IN
= V
DD
100
�
A
V
OL
Output LOW Voltage (Note 6) I
OL
= 8 mA (−1)
I
OL
= 12 mA (−1H)
0.4
V
V
OH
Output HIGH Voltage (Note 6) I
OH
= −8 mA (−1)
I
OH
= −12 mA (−1H)
2.4
V
I
DD
Supply
Current
Commercial temp. Unloaded outputs at 66.67 MHz,
SEL inputs at V
DD
30
mA
Industrial temp.
32
5. REF input has a threshold voltage of V
DD
/2.
6. Parameter is guaranteed by design and characterization. Not 100% tested in production.
ASM5P2305A, ASM5P2309A
http://onsemi.com
5
Table 7. SWITCHING CHARACTERISTICS (for ASM5P2305A (−1, −1H) and ASM5P2309A (−1, −1H) (Notes 7, 8)
Parameter Test
Conditions
Min Typ Max Unit
Output Frequency
30 pF load
10 pF load
10
10
100
133
MHz
Duty Cycle (Note 9)
Measured at 1.4 V, F
OUT
> 50 MHz
40
50
60
%
Measured at V
DD
/2, F
OUT
≤ 50 MHz 45 50 55
Output Rise Time (Note 9) Measured between 0.8 V and 2.0 V
(−1)
2.25
nS
(−1H)
1.5
2
Output Fall Time (Note 9) Measured between 2.0 V and 0.8 V
(−1)
2.25
nS
(−1H)
1.5 2
Output−to−output skew (Note 9)
All outputs equally loaded
200
pS
Delay, REF Rising Edge to
CLKOUT Rising Edge (Note 9)
Measured at V
DD
/2
0 ±350 pS
Device−to−Device Skew (Note 9)
Measured at V
DD
/2 on the CLKOUT pins of the device
0 700 pS
Cycle−to−cycle Jitter (Note 9)
Measured at 66.67 MHz, loaded outputs
200 pS
PLL Lock Time (Note 9)
Stable power supply, valid clock presented on REF pin
1.0
mS
7. For all measurements use Test Circuit #1.
8. All parameters are specified with loaded outputs.
9. Parameter is guaranteed by design and characterization. Not 100% tested in production.
TEST CIRCUIT #1
+3.3
V
0.1
�
F
V
DD
ASM5P2305A
ASM5P2309A
GND
22
Q
22
Q
CLK OUT
C
LOAD
CLK A / CLK B
C
LOAD
Figure 3. Test
Circuit
ASM5P2305A, ASM5P2309A
http://onsemi.com
6
Switching Waveforms
t
1
t
2
1.4 V 1.4 V 1.4 V
OUTPUT
Figure 4. Duty Cycle Timing
2
V
0.8
V
2 V
0.8 V
VDD
OUTPUT
0
V
t
3
t
4
Figure 5. All Outputs Rise/Fall
T
ime
1.4 V
OUTPUT
1.4
V
OUTPUT
t
5
Figure 6. Output−Output Skew
V
DD
/2
INPUT
OUTPUT
V
DD
/2
t
6
Figure 7. Input−Output Propagation Delay
V
DD
/2
CLKOUT, Device1
CLKOUT, Device2
V
DD
/2
t
7
Figure 8. Device−Device Skew
P1-P3P4-P6P7-P9P10-P12

P5P2309AF-1H16SR

Mfr. #:
Buy P5P2309AF-1H16SR
Manufacturer:
ON Semiconductor
Description:
Clock Buffer 10-133MHZ 3.3V 9 O/P ZDB
Lifecycle:
New from this manufacturer.
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