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MMSZ5231BT1G

P1-P3P4-P6P7-P7
MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series
www.onsemi.com
4
2% TOLERANCE FG ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Device*
Device
Marking
Zener Voltage (Notes 6 and 7) Zener Impedance (Note 8)
Leakage Cur-
rent
V
Z
(Volts) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA
Volts
MMSZ5226CT1G TD 3.234 3.3 3.366 20 28 1600 0.25 25 1
MMSZ5231CT1G TG 4.998 5.1 5.202 20 17 1600 0.25 5 2
MMSZ5232CT1G TH 5.488 5.6 5.712 20 11 1600 0.25 5 3
MMSZ5245CT1G TK 14.70 15 15.30 8.5 16 600 0.25 0.1 11
MMSZ5248CT1G TL 17.64 18 18.36 7.0 21 600 0.25 0.1 14
MMSZ5250CT1G TN 19.60 20 20.40 6.2 25 600 0.25 0.1 15
MMSZ5252CT1G TQ 23.52 24 24.48 5.2 33 600 0.25 0.1 18
MMSZ5256CT1G TW 29.40 30 30.60 4.2 49 600 0.25 0.1 23
MMSZ5258CT1G TX 35.28 36 36.72 3.4 70 700 0.25 0.1 27
6. “C” Suffix Type numbers shown have a standard tolerance of ±2% on the nominal Zener voltages.
7. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30°C ±1°C.
8. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*Includes SZ-prefix devices where applicable.
MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series
www.onsemi.com
5
TYPICAL CHARACTERISTICS
V
Z
, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL T
C
VALUES
FOR MMSZ52xxBT1G SERIES,
SZMMSZ52xxBT1G SERIES
V
Z
@ I
ZT
1000
10
1
10 20
0
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
0.4
0.2
0
1501251007550250
T, TEMPERATURE (°C)
Figure 3. Steady State Power Derating
P
D
versus T
A
P
D
versus T
L
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 100
0
1000
100
10
1
RECTANGULAR
WAVEFORM, T
A
= 25°C
100
V
Z
, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
1000
100
10
1
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
20 mA
V
F
, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1
.2
1.11.00.90.80.70.60.50.4
1000
100
10
1
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
150°C
75°C 25°C 0°C
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
P
pk
, PEAK SURGE POWER (WATTS)
Z
ZT
, DYNAMIC IMPEDANCE (
W
)
I
F
, FORWARD CURRENT (mA)
100
100
TYPICAL T
C
VALUES
FOR MMSZ52xxBT1G SERIES,
SZMMSZ52xxBT1G SERIES
V
Z
@ I
ZT
MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series
www.onsemi.com
6
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1
101
BIAS AT
50% OF V
Z
NOM
T
A
= 25°C
0 V BIAS
1 V BIAS
12
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
1086420
T
A
= 25°C
V
Z
, ZENER VOLTAGE (V)
100
10
1
0.1
0.01
10 30 50 70 90
T
A
= 25°C
9
0
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80706050403020100
+150°C
+25°C
−55°C
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
I
R
, LEAKAGE CURRENT (mA)
I
Z
, ZENER CURRENT (mA)
I
Z
, ZENER CURRENT (mA)
Figure 11. SOD−123 (plastic) 500 Watt Device
P
W
, PULSE WIDTH (ms)
10K1K100101
0.970
0.975
0.985
0.995
1.000
1.005
1.015
V
Z
, ZENER VOLTAGE (NORMALIZED)
100K 1M
0.980
0.990
1.010
47 V
V
Z
= 3.0 V
91 V
P1-P3P4-P6P7-P7

MMSZ5231BT1G

Mfr. #:
Buy MMSZ5231BT1G
Manufacturer:
ON Semiconductor
Description:
Zener Diodes 5.1V 500mW
Lifecycle:
New from this manufacturer.
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