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SIZ300DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
SiZ300DT
New Product
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
• PowerPAIR Optimizes High-Side and Low-Side
MOSFETs for Synchronous Buck Converters
• TrenchFET
®
Power Mosfets
• 100 % R
g
and UIS Tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Computing System Power
• POL
• Synchronous Buck Converter
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a
Q
g
(Typ.)
Channel-1 30
0.0240 at V
GS
= 10 V
11
3.5 nC
0.0320 at V
GS
= 4.5 V
11
Channel-2 30
0.0110 at V
GS
= 10 V
28
6.8 nC
0.0165 at V
GS
= 4.5 V
28
PowerPAIR
®
3 x 3
Ordering Information:
SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
/D
2
D
1
3 mm
Pin 1
3 mm
G
1
D
1
D
1
D
1
1
2
3
4
8
7
6
5
G
2
S
2
S
2
S
2
(Pin 9)
D
1
S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
1
S
1
/D
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
11
a
28
a
A
T
C
= 70 °C
11
a
28
a
T
A
= 25 °C
9.8
b, c
14.9
b, c
T
A
= 70 °C
7.8
b, c
11.9
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
30 40
Continuous Source Drain Diode Current
T
A
= 25 °C
IS
11
a
26
T
A
= 25 °C
3.2
b, c
3.8
b, c
Avalanche Current
L = 0.1 mH
I
AS
12 15
Single Pulse Avalanche Energy
E
AS
711mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
16.7 31
W
T
C
= 70 °C
10.7 20
T
A
= 25 °C
3.7
b, c
4.2
b, c
T
A
= 70 °C
2.4
b, c
2.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
www.vishay.com
2
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
Vishay Siliconix
SiZ300DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
a, b
t 10 s R
thJA
27 34 24 30
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
67.53.24
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0, I
D
= 250 µA
Ch-1 30
V
V
GS
= 0 V, I
D
= 250 µA
Ch-2 30
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
Ch-1 24
mV/°C
I
D
= 250 µA
Ch-2 30
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 µA
Ch-1 - 4.1
I
D
= 250 µA
Ch-2 - 5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Ch-1 1 2.4
V
V
DS
= V
GS
, I
D
= 250 µA
Ch-2 1 2.2
Gate Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
Ch-1 ± 100
nA
Ch-2 ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 1
µA
V
DS
= 30 V, V
GS
= 0 V
Ch-2 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-1 5
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-2 5
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
Ch-1 10
A
V
DS
5 V, V
GS
= 10 V
Ch-2 10
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 9.8 A
Ch-1 0.0200 0.0240
V
GS
= 10 V, I
D
= 15 A
Ch-2 0.0090 0.0110
V
GS
= 4.5 V, I
D
= 8.5 A
Ch-1 0.0265 0.0320
V
GS
= 4.5 V, I
D
= 12 A
Ch-2 0.0135 0.0165
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 9.8 A
Ch-1 30
S
V
DS
= 15 V, I
D
= 15 A
Ch-2 30
Dynamic
a
Input Capacitance
C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 400
pF
Ch-2 730
Output Capacitance
C
oss
Ch-1 125
Ch-2 155
Reverse Transfer Capacitance
C
rss
Ch-1 25
Ch-2 65
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 9.8 A
Ch-1 7.4 12
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 15 A
Ch-2 14.2 22
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 9.8 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
Ch-1 3.5 5.3
Ch-2 6.8 11
Gate-Source Charge
Q
gs
Ch-1 1.5
Ch-2 2.2
Gate-Drain Charge
Q
gd
Ch-1 1.1
Ch-2 2.3
Gate Resistance
R
g
f = 1 MHz
Ch-1 0.5 2.6 5.2
Ch-2 0.5 2.6 5.2
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
www.vishay.com
3
Vishay Siliconix
SiZ300DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamic
a
Tu r n - On D e lay T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.9
I
D
8 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 25 50
ns
Ch-2 25 50
Rise Time
t
r
Ch-1 45 90
Ch-2 80 160
Turn-Off Delay Time
t
d(off)
Ch-1 10 20
Ch-2 20 40
Fall Time
t
f
Ch-1 10 20
Ch-2 40 80
Tu r n - On D e lay T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.9
I
D
8 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-1 5 10
Ch-2 5 10
Rise Time
t
r
Ch-1 10 20
Ch-2 20 40
Turn-Off Delay Time
t
d(off)
Ch-1 10 20
Ch-2 15 30
Fall Time
t
f
Ch-1 7 15
Ch-2 10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
Ch-1 11
A
Ch-2 26
Pulse Diode Forward Current
a
I
SM
Ch-1 30
Ch-2 40
Body Diode Voltage
V
SD
I
S
= 8 A, V
GS
= 0 V
Ch-1 0.84 1.2
V
I
S
= 10 A, V
GS
= 0 V
Ch-2 0.82 1.2
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 8 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1 17 35
ns
Ch-2 20 40
Body Diode Reverse Recovery Charge
Q
rr
Ch-1 9 20
nC
Ch-2 14 30
Reverse Recovery Fall Time
t
a
Ch-1 9.5
ns
Ch-2 12.5
Reverse Recovery Rise Time
t
b
Ch-1 7.5
Ch-2 7.5
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ300DT-T1-GE3

Mfr. #:
Buy SIZ300DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
Lifecycle:
New from this manufacturer.
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