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SIZ300DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
Vishay Siliconix
SiZ300DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
R
DS(on)
- On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 2 4 6 8
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 7.5 V
V
DS
= 15 V
I
D
= 11 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
= 25
C
T
C
= 125
°
C
T
C
= - 55 °C
0
100
200
300
400
500
600
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
-50-250 255075100125150
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
I
D
= 9.8 A
V
GS
= 10 V
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
www.vishay.com
5
Vishay Siliconix
SiZ300DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
1.4
1.6
1.8
2.0
2.2
2.4
-50-250 255075100125150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.01
0.02
0.03
0.04
0.05
0.06
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 9.8 A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 μs
100 ms
Limited by R
DS(on)
*
1 ms
T
Single Pulse
A
= 25 °C
BVDSS Limited
10 ms
1 s
DC
www.vishay.com
6
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
Vishay Siliconix
SiZ300DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
4
8
12
16
20
25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ300DT-T1-GE3

Mfr. #:
Buy SIZ300DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
Lifecycle:
New from this manufacturer.
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