OMO ElectronicOMO Electronic
Expand menu
0 Cart

STTH8ST06DI

P1-P3P4-P6P7-P9
This is information on a product in full production.
July 2015 DocID024150 Rev 2 1/9
9
STTH8ST06
600 V tandem extra fast diode
Datasheet − production data
Features
• High voltage rectifier
• Tandem diodes in series
• Very low switching losses
• Insulated device with internal ceramic
• Equal thermal conditions for both 300 V diodes
• Static and dynamic equilibrium of internal
diodes are warranted by design
• Insulated package:
– Insulated voltage: 2500 V
RMS
sine
Description
This device is part of ST's second generation of
600 V tandem diodes. It has ultralow switching-
losses with a minimized Q
RR
that makes it perfect
for use in circuits working in hard-switching mode.
In particular the V
F
/Q
RR
trade-off positions this
device between standard ultrafast diodes and
silicon-carbide Schottky rectifiers in terms of
price/performance ratio.
The device offers a new positioning giving more
flexibility to power-circuit designers looking for
good performance while still respecting cost
constraints.
Featuring ST's Turbo 2 600 V technology, the
device is particularly suited as a boost diode in
continuous conduction mode power factor
correction circuits.
72$&LQV
$
$
.
.
Table 1. Device summary
Symbol Value
I
F(AV)
8 A
V
RRM
600 V
t
rr
(typ) 13 ns
I
RM
(typ) 2 A
V
F
(typ) 2.5 V
I
FRM
40 A
T
j
(max) 175 °C
www.st.com
Characteristics STTH8ST06
2/9 DocID024150 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 2.2 x I
F(AV)
+ 0.113 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
T
j
from 25 to 150 °C 600
V
T
j
= -40 °C 550
I
F(RMS)
Forward rms current 14 A
I
F(AV)
Average forward current, δ = 0.5, square wave T
c
= 80 °C 8 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 55 A
I
FRM
Repetitive peak forward current T
c
= 80 °C, δ = 0.1 40 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range -40 to +175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.9 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-6
µA
T
j
= 125 °C - 20 200
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
-3.4
V
T
j
= 150 °C - 2.5 3.1
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
DocID024150 Rev 2 3/9
STTH8ST06 Characteristics
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 1 A, V
R
= 30 V,
dI
F
/dt = -50 A/µs
-2026
ns
I
F
= 8 A, V
R
= 400 V,
dI
F
/dt = -200 A/µs
-1317
I
RM
Reverse recovery current
T
j
= 125 °C
I
F
= 8 A, V
R
= 400 V,
dI
F
/dt = -200 A/µs
-22.6A
S Softness factor - 0.9 -
Q
RR
Reverse recovery charge
T
j
= 25 °C - 4
nC
T
j
= 125 °C - 20
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Forward voltage drop versus forward
current (typical values)
P
F(AV)
(W)
0
5
10
15
20
25
30
35
40
01234567891011
T
δ
=tp/T
tp
δ=0.05
δ=0.1
=0.2
δ
δ
=0.5
δ=1
I
F(AV)
(A)
I
FM
(A)
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
T
j
=150 °C
T
j
=125 °C
T
j
=25 °C
V
FM
(V)
Figure 3. Relative variation of thermal
impedance, junction to case, versus pulse
duration
Figure 4. Peak reverse recovery current versus
dI
F
/dt (typical values)
Z
th (j-c)
/R
th (j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Single pulse
t
p
()s
         
,
50
$
GO
)
GW$V
9
5
9
7
M
 &
,
)
 [,
)$9
,
)
 ,
)$9
,
)
 [,
)$9
P1-P3P4-P6P7-P9

STTH8ST06DI

Mfr. #:
Buy STTH8ST06DI
Manufacturer:
STMicroelectronics
Description:
Rectifiers 600V Ultra Trandem 7pF 8A 13ns 2A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet