Characteristics STTH8ST06
4/9 DocID024150 Rev 2
Figure 5. Reverse recovery time versus dI
F
/dt
(typical values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
W
UU
QV
GO
)
GW$V
9
5
9
7
M
&
,
)
[,
)$9
,
)
,
)$9
,
)
[,
)$9
Q
RR
(nC)
0
5
10
15
20
25
30
35
40
45
0 100 200 300 400 500 600 700 800 900 1000
V
R
=400 V
T
j
=125 °C
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
dI
F
/dt(A/µs)
Figure 7. Reverse recovery softness factor
versus dI
F
/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction temperature
S
FACT OR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 100 200 300 400 500 600 700 800 900 1000
dI
F
/dt(A/µs)
I
F
=I
F(AV)
V
R
=400 V
T
j
=125 °C
dI
F
/dt(A/µs)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
25 50 75 100 125
I
F
=I
F(AV)
V
R
=400 V
Reference: T
j
=125 °C
I
RM
S
FACTOR
Q
RR
T
j
(°C)
Figure 9. Junction capacitance versus reverse
voltage applied (typical values)
Figure 10. Relative variation of non-repetitive
peak surge forward current versus pulse
duration
C(pF)
1
10
100
1 10 100 1000
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
V
R
(V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1 1.0 10.0
I (t )/I (10ms)
FSM p FSM
,t(ms)
p
sinusoidal waveform
