052-6344 Rev E 5 - 2011
Thermal and Mechanical Characteristics
Dynamic Characteristics T
J
= 25°C unless otherwise specifi ed
APT35GA90BD_SD15
Symbol Characteristic Min Typ Max Unit
R
JC
Junction to Case Thermal Resistance (IGBT) - - .43
°C/W
R
JC
Junction to Case Thermal Resistance (Diode) 1.18
W
T
Package Weight - 5.9 - g
Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 in·lbf
Symbol Parameter Test Conditions Min Typ Max Unit
C
ies
Input Capacitance Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz
1934
pF
C
oes
Output Capacitance 173
C
res
Reverse Transfer Capacitance 28
Q
g
3
Total Gate Charge Gate Charge
V
GE
= 15V
V
CE
= 450V
I
C
= 18A
84
Q
ge
Gate-Emitter Charge 14
nC
Q
gc
Gate- Collector Charge 34
SSOA Switching Safe Operating Area
T
J
= 150°C, R
G
= 10
4
, V
GE
= 15V,
L= 100uH, V
CE
= 900V
105 A
t
d(on)
Turn-On Delay Time Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 18A
R
G
= 10
4
T
J
= +25°C
12
ns
t
r
Current Rise Time 15
t
d(off)
Turn-Off Delay Time 104
t
f
Current Fall Time 86
E
on2
Turn-On Switching Energy 642
J
E
off
6
Turn-Off Switching Energy
382
t
d(on)
Turn-On Delay Time Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 18A
R
G
= 10
4
T
J
= +125°C
11
ns
t
r
Current Rise Time 14
t
d(off)
Turn-Off Delay Time 154
t
f
Current Fall Time 144
E
on2
Turn-On Switching Energy 1044
J
E
off
6
Turn-Off Switching Energy
907
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.