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APT35GA90BD15

P1-P3P4-P6P7-P9
052-6344 Rev E 5 - 2011
0
500
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3000
0 25 50 75 100 125
0
500
1000
1500
2000
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3000
3500
0 10 20 30 40 50
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0 5 10 15 20 25 30 35 40
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30 35 40
0
20
40
60
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100
120
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180
200
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40
0
40
80
120
160
200
0 5 10 15 20 25 30 35 40
10
11
12
13
14
15
0 5 10 15 20 25 30 35 40
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 600V
R
G
= 10
L = 100H
V
CE
= 600V
V
GE
= +15V
R
G
=10
V
CE
= 600V
T
J
= 25°C, or 125°C
R
G
= 10
L = 100H
V
CE
= 600V
V
GE
= +15V
R
G
= 10
V
CE
= 600V
V
GE
= +15V
R
G
= 10
R
G
= 10, L = 100H, V
CE
= 600V
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
R
G
= 10, L = 100H, V
CE
= 600V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
E
on2,
36A
E
on2,
18A
E
off,
18A
E
on2,
9A
E
off,
9A
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
E
on2,
36A
E
on2,
18A
E
off,
36A
E
off,
18A
E
on2,
9A
E
off,
9A
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t
d(ON)
, TURN-ON DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t
r
, RISE TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t
r
, FALL TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN ON ENERGY LOSS (J)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
, TURN OFF ENERGY LOSS (J)
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
E
off,
36A
Typical Performance Curves APT35GA90BD_SD15
052-6344 Rev E 5 - 2011
Typical Performance Curves APT35GA90BD_SD15
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
10
-5
10
-4
10
-3
10
-2
0.1 1
1
10
100
1,000
10,000
0 200 400 600 800
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
C
oes
C
res
C
ies
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
200
1 10 100 1000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
052-6344 Rev E 5 - 2011
Figure 21, Turn-on Switching Waveforms and Defi nitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
Figure 22, Turn-off Switching Waveforms and Defi nitions
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
V
CC
APT30DQ120
Figure 20, Inductive Switching Test Circuit
APT35GA90BD_SD15
P1-P3P4-P6P7-P9

APT35GA90BD15

Mfr. #:
Buy APT35GA90BD15
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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