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ESDM1131MX4T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 1
1 Publication Order Number:
ESDM1131/D
ESDM1131
3.3 V ESD Protection
Diodes
Micro−packaged Diodes for ESD
Protection
The ESD1131 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart-watch, or many other portable / wearable
applications where board space comes at a premium.
Features
• Low Capacitance (4 pF, I/O to GND)
• Small Body Outline Dimensions
♦ 01005 Size: 0.445 x 0.240 mm
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Operating Junction Temperature Range T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
260 °C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
ESD
±16
±16
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
PIN CONFIGURATION
AND SCHEMATIC
www.
onsemi.com
12
=
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
X4DFN2
CASE 718AA
A = Specific Device Code
A
ESDM1131
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
I/O Pin to GND 3.3 V
Breakdown Voltage V
BR
I
T
= 1 mA, I/O Pin to GND 4.0 5.0 6.0 V
Reverse Leakage Current I
R
V
RWM
= 3.3 V, I/O Pin to GND 0.1
mA
Clamping Voltage V
C
I
PP
= 4 A, (8x20 ms pulse)
5.6 V
Clamping Voltage
TLP (Note 1)
V
C
I
PP
= 8 A IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
5.5
V
I
PP
= 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±15 kV Air)
7.0
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 4.0 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
ORDERING INFORMATION
Device Package Shipping
†
ESDM1131MX4T5G X4DFN2
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ESDM1131
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. CV Characteristics
Figure 2. Reverse Leakage Current
V
BIAS
(V)
2.51.5 3.50.5−0.5−1.5−2.5−3.5
0
1
2
3
4
5
6
10
C (pF)
7
8
9
V
R
(V)
−6
1E−13
I
R
(A)
−31
FREQUENCY (GHz)
2.51.51.00.5
0
1
3
4
5
7
8
10
CAPACITANCE (pF)
2
6
9
2.0 3.0
Figure 3. S21 Insertion Loss
FREQUENCY (Hz)
1.E+07
−10
−8
−4
−2
0
2
(dB)
−6
1.E+08 1.E+09
Figure 4. Capacitance over Frequency
−5 −4 −2 −10 23456
1E−12
1E−11
1E−10
1E−09
1E−08
1E−07
1E−06
1E−05
1E−04
1E−03
P1-P3P4-P6

ESDM1131MX4T5G

Mfr. #:
Buy ESDM1131MX4T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ISOLATED X4DFN VRWM=3.3V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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