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IRFR9214

P1-P3P4-P6P7-P9P10-P11
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
www.vishay.com
Vishay Siliconix
S13-0166-Rev. D, 04-Feb-13
7
Document Number: 91282
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91282
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D =
P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by R
g
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
• Compliment N-Channel of D.U.T. for driver
V
DD
• I
SD
controlled by duty factor “D”
Note
Note
a. V
GS
= - 5 V for logic level and - 3 V drive devices
V
GS
= - 10 V
a
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
V
DD
Re-applied
voltage
Ripple ≤ 5 %
I
SD
Reverse
recovery
current
Document Number: 91344 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
E
b3
L3
L4
b2
e
b
D
H
E1
D1
A
c2
L1
L2
c
A1
L
θ
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
E 6.40 6.73 0.252 0.265
L 1.40 1.77 0.055 0.070
L1 2.743 REF 0.108 REF
L2 0.508 BSC 0.020 BSC
L3 0.89 1.27 0.035 0.050
L4 0.64 1.01 0.025 0.040
D 6.00 6.22 0.236 0.245
H 9.40 10.40 0.370 0.409
b 0.64 0.88 0.025 0.035
b2 0.77 1.14 0.030 0.045
b3 5.21 5.46 0.205 0.215
e 2.286 BSC 0.090 BSC
A 2.20 2.38 0.087 0.094
A1 0.00 0.13 0.000 0.005
c 0.45 0.60 0.018 0.024
c2 0.45 0.58 0.018 0.023
D1 5.30 - 0.209 -
E1 4.40 - 0.173 -
θ 0' 10' 0' 10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Base
metal
Plating
b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
D
A
c2
c
Lead tip
5
5
(Datum A)
Thermal PAD
E1
4
D1
View A - A
A1
A
A
C
Seating
plane
C
C
B
B
θ1
θ2
B
4
4
4
3
5
L1
L
L3
3 x b2
3 x b
3
b4
E
2 x e
0.010 C B
M
A
0.25
0.010 BA
0.25
L2
A
C
M
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
P1-P3P4-P6P7-P9P10-P11

IRFR9214

Mfr. #:
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Manufacturer:
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Description:
MOSFET RECOMMENDED ALT 844-IRFR9214PBF
Lifecycle:
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