NTMD2P01R2G

NTMD2P01R2
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4
t
r
t, TIME (ns)
GATETOSOURCE OR DRAINTOSOURCE
VOLTAGE (VOLTS)
t
d
(off)
t
d
(off)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage
versus Current
Figure 12. Diode Reverse Recovery Waveform
V
DS
= 0 V V
GS
= 0 V
T
J
= 25°C
C
iss
C
rss
C
oss
C
iss
C
rss
V
DD
= 10 V
I
D
= 1.2 A
V
GS
= 2.7 V
t
f
t
d
(on)
t
r
t
f
V
GS
= 0 V
T
J
= 25°C
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
1
0
0.90.80.70.60.50.4
0.4
0.8
1.2
1.6
2
V
SD,
SOURCETODRAIN VOLTAGE (VOLTS)
1.0
100101.0
10
100
10
10010
1.0
100
1000
R
G,
GATE RESISTANCE (OHMS)
2010
1500
1200
5051015
900
600
300
0
R
G,
GATE RESISTANCE (OHMS)
t, TIME (ns)
I
S,
SOURCE CURRENT (AMPS)
V
DD
= 10 V
I
D
= 2.4 A
V
GS
= 4.5 V
t
d
(on)
C, CAPACITANCE (pF)
V
DS
V
GS
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
QT
Q2
Q1
V
GS
I
D
= 2.4 A
T
J
= 25°C
V
DS
0
80
3
5
1
2
4
246 10 14
Q
g
, TOTAL GATE CHARGE (nC)
20
18
16
14
12
10
8
6
4
2
0
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
12
NTMD2P01R2
http://onsemi.com
5
0.1
Figure 13. FET Thermal Response
Normalized to R
ja
at Steady State (1 inch pad)
0.0125 W 0.0563 W 0.110 W 0.273 W 0.113 W 0.436 W
0.021 F 0.137 F 1.15 F 2.93 F 152 F
261 F
0.01
0.02
0.05
0.2
Single Pulse
D = 0.5
R
thja(t),
EFFECTIVE TRANSIENT THERMAL RESPONSE
t, TIME (s)
1E03 1E02 1E01 1E+00 1E+03 1E+02 1E+03
1
0.1
0.01
NTMD2P01R2
http://onsemi.com
6
PACKAGE DIMENSIONS
SOIC8 NB
CASE 75107
ISSUE AG
SEATING
PLANE
1
4
58
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 75101 THRU 75106 ARE OBSOLETE. NEW
STANDARD IS 75107.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
X
Y
G
M
Y
M
0.25 (0.010)
Z
Y
M
0.25 (0.010) Z
S
X
S
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒ
mm
inches
Ǔ
SCALE 6:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
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NTMD2P01R2G

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ON Semiconductor
Description:
MOSFET 2P-CH 16V 2.3A 8SOIC
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