7
Specifications ispGDX240VA
Figure 6. Data Bus Byte Swapper
Figure 7. Four-Port Memory Interface
Control Bus
Data Bus A
Data Bus B
OEA OEB
I/OA
D0-7
D8-15 D8-15
D0-7
I/OB
XCVR
OEA OEB
I/OA I/OB
XCVR
OEA OEB
I/OA I/OB
XCVR
OEA OEB
I/OA I/OB
XCVR
Bus 4
Bus 3
Bus 2
Bus 1
Port #1
OE1
Memory
Port
OEM
SEL0
SEL1
To
Memory
Port #2
OE2
Port #3
OE3
Note: All OE and SEL lines driven by external arbiter logic (not shown).
Port #4
OE4
4-to-1
16-Bit MUX
Bidirectional
Figure 5. Address Demultiplex/Data Buffering
Control Bus
MUXed Address Data Bus
DQ
CLK
OEA OEB
I/OA I/OB
Address
Buffered
Data
To Memory/
Peripherals
XCVR
Address
Latch
Applications (Continued)
Designing with the ispGDXVA
As mentioned earlier, this architecture satisfies the PRSI
class of applications without restrictions: any I/O pin as a
single input or bidirectional can drive any other I/O pin as
output.
For the case of PDP applications, the designer does have
to take into consideration the limitations on pins that can
be used as control (MUX0, MUX1, OE, CLK) or data
(MUXA-D) inputs. The restrictions on control inputs are
not likely to cause any major design issues because the
input possibilities span 25% of the total pins.
The MUXA-D input partitioning requires that designers
consciously assign pinouts so that MUX inputs are in the
appropriate, disjoint groups. For example, since the
MUXA group includes I/O A0-39 (240 I/O device), it is not
possible to use I/O A0 and I/O A9 in the same MUX
function. As previously discussed, data path functions
will be assigned early in the design process and these
restrictions are reasonable in order to optimize speed
and cost.
User Electronic Signature
The ispGDXVA Family includes dedicated User Elec-
tronic Signature (UES) E
2
CMOS storage to allow users
to code design-specific information into the devices to
identify particular manufacturing dates, code revisions,
or the like. The UES information is accessible through
the boundary scan programming port via a specific com-
mand. This information can be read even when the
security cell is programmed.
Security
The ispGDXVA Family includes a security feature that
prevents reading the device program once set. Even
when set, it does not inhibit reading the UES or device ID
code. It can be erased only via a device bulk erase.
8
Specifications ispGDX240VA
Absolute Maximum Ratings
1,2
Supply Voltage V
cc
................................. -0.5 to +5.4V
Input Voltage Applied............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T
J
) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
DC Recommended Operating Conditions
C
SYMBOL
Table 2-0006/gdxva
C
PARAMETER PACKAGE TYPE
Dedicated Clock Capacitance
8
UNITSTYPICAL TEST CONDITIONS
1
2
7TQFP
TQFP
I/O Capacitance
pf
pf
V = 3.3V, V = 2.0V
V = 3.3V, V = 2.0V
CC
CC Y
I/O
Capacitance (T
A
=25
o
C, f=1.0 MHz)
PARAMETER MINIMUM MAXIMUM UNITS
Erase/Reprogram Cycles 10,000 Cycles
Erase/Reprogram Specifications
SYMBOL
Table 2-0005/gdxva
V
CC
V
CCIO
PARAMETER
Supply Voltage
I/O Reference Voltage
Commercial
T
A
= 0°C to +70°C
MIN. MAX. UNITS
3.00
2.3
3.60
3.60
V
Industrial
T
A
= -40°C to +85°C
3.00 3.60 V
V
9
Specifications ispGDX240VA
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to V
CCIO(MIN)
< 1.5ns 10% to 90%
V
CCIO(MIN)
/2
V
CCIO(MIN)
/2
See Figure 8
3-state levels are measured 0.5V from steady-state active level.
Output Load Conditions (See Figure 8)
TEST CONDITION R1
3.3V 2.5V
R2 CL
A 35pF
D 35pF
B
35pF
35pF
Active High
Slow Slew
Active Low
C
5pF
5pF
156
156
156
144
144
144
R1 R2
153
153
153
134
134
134
Active Low to Z
at V +0.5V
OL
Active High to Z
at V -0.5V
OH
Table 2-0004A/gdxva
DC Electrical Characteristics for 3.3V Range
Over Recommended Operating Conditions
Figure 8. Test Load
V
CCIO
R
1
R
2
C
L
*
Device
Output
Test
Point
*C
L
includes Test Fixture and Probe Capacitance.
0213D
V
OL
SYMBOL
1. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
Table 2-0007/gdxva
V
OH
V
IH
V
IL
PARAMETER
Output Low Voltage
Output High Voltage
Input High Voltage
Input Low Voltage
V
CC
= V
CC (MIN)
I
OL
= +100µA
I
OL
= +24mA
I
OH
= -100µA
I
OH
= -12mA
V
CC
= V
CC (MIN)
V
OH
V
OUT
or V
OUT
V
OL(MAX)
V
OH
V
OUT
or V
OUT
V
OL (MAX)
CONDITION MIN. TYP. MAX. UNITS
1
2.8
2.0
-0.3
0.2
5.25
0.8
V
––0.55 V
V
2.4 V
V
CCIO
I/O Reference Voltage 3.0 3.6 V
V
V

ISPGDX240VA-7B388I

Mfr. #:
Manufacturer:
Lattice
Description:
Analog & Digital Crosspoint ICs PROGRAMMABLE GEN DIG CROSSPOINT
Lifecycle:
New from this manufacturer.
Delivery:
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