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NRVBAF260T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 3
1 Publication Order Number:
MBRAF260/D
MBRAF260T3G,
NRVBAF260T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Device Package Shipping
†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
60 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRAF260T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAG = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
NRVBAF260T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAG
AYWWG
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 120°C)
I
O
2.0
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
L
= 90°C
I
FRM
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
60
A
Storage Temperature Range T
stg
−55 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Controlled Avalanche Energy (see test conditions in Figures 6 and 7) W
AVAL
10 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JL
R
q
JA
25
90
°C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A)
(i
F
= 2.0 A)
v
F
T
J
= 25°C T
J
= 125°C
V
0.51
0.63
0.475
0.55
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 60 V)
I
R
T
J
= 25°C T
J
= 125°C
mA
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
3
Figure 1. Typical Forward Voltage
0.1 0.2 0.4 0.70.6
10
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.2 0.
8
0.4 0.60.3 0.5
10
0.1
1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
10 3002040
I
R
, REVERSE CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
75°C
25°C
1.0E−02
125°C
75°C
25°C
10 3002040
10
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
0.3 0.5 0.8
125°C
75°C
25°C
125°C
6050 50 6
0
100
0.70.1
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
25°C
f = 1 MHz
0.001
0.01
0.1
1
10
100
0.0000001 0.000001 0.00001 0.0001 10000.001 0.01 0.1 1 10 100
Figure 5. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
R
(t)
, TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
P1-P3P4-P5

NRVBAF260T3G

Mfr. #:
Buy NRVBAF260T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF MBRAF260
Lifecycle:
New from this manufacturer.
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