NRVBAF260T3G

MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
4
MERCURY
SWITCH
V
D
I
D
DUT
10 mH COIL
+V
DD
I
L
S
1
BV
DUT
I
L
I
D
V
DD
t
0
t
1
t
2
t
Figure 6. Test Circuit
Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
W
AVAL
[
1
2
LI
2
LPK
ǒ
BV
DUT
BV
DUT
V
DD
Ǔ
W
AVAL
[
1
2
LI
2
LPK
EQUATION (1):
EQUATION (2):
MBRAF260T3G, NRVBAF260T3G
www.onsemi.com
5
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE A
D
E
b
L
c
SOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
5.56
1.76
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1.30
RECOMMENDED
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM MIN MAX
MILLIMETERS
A 0.90 1.10
b 1.25 1.65
c 0.15 0.30
D 2.40 2.80
TOP VIEW
E1
BOTTOM VIEW
2X
2X
SIDE VIEW
A
C
SEATING
PLANE
E 4.80 5.40
E1 4.00 4.60
L 0.70 1.10
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NRVBAF260T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF MBRAF260
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