SPU09P06PL

P1-P3 P4-P6 P7-P8

2001-07-02

Page 1

SPD09P06PL

SPU09P06PL

Final data

SIPMOS







=

==

=Power-Transistor

Product Summary

V

DS

-60 V

R

DS

(

on

)

0.25

I

D

-9.7 A

Feature

P-Channel

Enhancement mode

Logic Level

175°C operating temperature

Avalanche rated

dv/dt rated

P-TO251-3-1 P-TO252

Gate

pin1

Drain

pin 2

Source

pin 3

Type Package Ordering Code

SPD09P06PL P-TO252 Q67042-S4007

SPU09P06PL P-TO251-3-1 Q67042-S4020

Maximum Ratings,at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

C

=25°C

T

C

=100°C

I

D

-9.7

-6.8

A

Pulsed drain current

T

C

=25°C

I

D puls

-38.8

Avalanche energy, single pulse

I

D

=-9.7 A , V

DD

=-25V, R

GS

=25

E

AS

70 mJ

Avalanche energy, periodic limited by T

j

max

E

AR

4.2

Reverse diode dv/dt

I

S

=-9.7A, V

DS

=-48, di/dt=200A/µs, T

jmax

=175°C

dv/dt 6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

C

=25°C

P

tot

42 W

Operating and storage temperature T

j

,

T

st

g

-55... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

2001-07-02

Page 2

SPD09P06PL

SPU09P06PL

Final data

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

R

thJC

- - 3.6 K/W

Thermal resistance, junction - ambient, leaded

R

thJA

- - 100

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

-

-

-

-

75

50

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0V, I

D

=-250µA

V

(BR)DSS

-60 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=-250µA

V

GS(th)

-1 -1.5 -2

Zero gate voltage drain current

V

DS

=-60V, V

GS

=0V, T

j

=25°C

V

DS

=-60V, V

GS

=0V, T

j

=150°C

I

DSS

-

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

V

GS

=-20V, V

DS

=0V

I

GSS

- -10 -100 nA

Drain-source on-state resistance

V

GS

=-4.5V, I

D

=-5.4A

R

DS(on)

- 0.3 0.4

Drain-source on-state resistance

V

GS

=-10V, I

D

=-6.8A

R

DS(on)

- 0.2 0.25

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2001-07-02

Page 3

SPD09P06PL

SPU09P06PL

Final data

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

2*I

D

*R

DS(on)max

,

I

D

=-5.4

1.8 3.5 - S

Input capacitance C

iss

V

GS

=0V, V

DS

=-25V,

f=1MHz

- 360 450 pF

Output capacitance C

oss

- 103 130

Reverse transfer capacitance C

rss

- 40 50

Turn-on delay time t

d(on)

V

DD

=-30V, V

GS

=-4.5V,

I

D

=-5.4, R

G

=6

- 11 17 ns

Rise time t

r

V

DD

=-30V, V

GS

=-4.5V,

I

D

=-5.4A, R

G

=6

- 168 252

Turn-off delay time t

d(off)

- 49 74

Fall time t

f

- 89 134

Gate Charge Characteristics

Gate to source charge Q

gs

V

DD

=-48V, I

D

=-9.7A - 1.3 2 nC

Gate to drain charge Q

gd

- 5.1 7.5

Gate charge total Q

g

V

DD

=-48V, I

D

=-9.7A,

V

GS

=0 to -10V

- 14 21

Gate plateau voltage V

(p

lateau

)

V

DD

=-48V, I

D

=-9.7A - -4.1 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

C

=25°C - - -9.7 A

Inverse diode direct current,

pulsed

I

SM

- - -38.8

Inverse diode forward voltage V

SD

V

GS

=0V, I

F

=-9.7A - -1.1 -1.4 V

Reverse recovery time t

rr

V

R

=-30V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 52 76 ns

Reverse recovery charge Q

rr

- 64 96 nC

P1-P3 P4-P6 P7-P8

SPU09P06PL

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET P-Ch -60V -9.7A IPAK-3

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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