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SPU09P06PL

P1-P3P4-P6P7-P8
2001-07-02
Page 4
SPD09P06PL
SPU09P06PL
Final data
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
5
10
15
20
25
30
35
40
W
50
SPD09P06PL
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: V
GS
10 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
A
-11
SPD09P06PL
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-1
-10
0
-10
1
-10
2
-10
A
SPD09P06PL
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 11.0µs
4 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD09P06PL
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-07-02
Page 5
SPD09P06PL
SPU09P06PL
Final data
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 -2 -4 -6 -8
V
-12
V
DS
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
A
-24
SPD09P06PL
I
D
V
GS
[V]
a
a -2.0
b
b -2.5
c
c -3.0
d
d -3.5
e
e -4.0
f
f -4.5
g
g -5.0
h
h -5.5
i
i -6.0
j
j -7.0
k
P
tot
= 42W
k -8.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 -2 -4 -6 -8 -10 -12 -14 -16
A
-20
I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
SPD09P06PL
R
DS(on)
V
GS
[V] =
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-5.5
i
i
-6.0
j
j
-7.0
k
k
-8.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 1 2 3 4 5 6
V
8
V
GS
0
5
10
15
A
25
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0 1 2 3 4 5 6 7 8
V
10
I
D
0
0.5
1
1.5
2
2.5
3
S
4
g
fs
2001-07-02
Page 6
SPD09P06PL
SPU09P06PL
Final data
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -6.8 A, V
GS
= -10 V
-60 -20 20 60 100 140
°C
200
T
j
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.75
SPD09P06PL
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
, I
D
= -250 µA
-60 -20 20 60 100
°C
180
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
V
GS(th)
typ.
98 %
2 %
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 -5 -10 -15 -20
V
-30
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-1
-10
0
-10
1
-10
2
-10
A
SPD09P06PL
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

SPU09P06PL

Mfr. #:
Buy SPU09P06PL
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V -9.7A IPAK-3
Lifecycle:
New from this manufacturer.
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