SQM100N10-10_GE3 Datasheet SQM100N10-10_GE3 | P1-P3

SQM100N10-10

www.vishay.com

Vishay Siliconix

S12-1845-Rev. B, 30-Jul-12

1

Document Number: 67027

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET

®

Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualified

d

•100 % R

g

and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 100

R

DS(on)

() at V

GS

= 10 V 0.0105

R

DS(on)

() at V

GS

= 4.5 V 0.0120

I

D

(A) 100

Configuration Single

D

G

S

N-Channel MOSFET

TO-263

SDG

Top View

ORDERING INFORMATION

Package TO-263

Lead (Pb)-free and Halogen-free SQM100N10-10-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

100

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

100

A

T

C

= 125 °C 70

Continuous Source Current (Diode Conduction)

a

I

S

100

Pulsed Drain Current

b

I

DM

400

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

75

Single Pulse Avalanche Energy E

AS

280 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM100N10-10

www.vishay.com

Vishay Siliconix

S12-1845-Rev. B, 30-Jul-12

2

Document Number: 67027

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.



SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 100 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.5 2.0 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 100 V - - 1

μA V

GS

= 0 V V

DS

= 100 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 100 V, T

J

= 175 °C - - 500

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

5 V 120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0070 0.0105



V

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0200

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0260

V

GS

= 4.5 V I

D

= 20 A - 0.0080 0.0120

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 115 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 6440 8050

pF Output Capacitance C

oss

- 655 820

Reverse Transfer Capacitance C

rss

- 315 395

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 50 V, I

D

= 85 A

- 122 185

nC Gate-Source Charge

c

Q

gs

-23-

Gate-Drain Charge

c

Q

gd

-28-

Gate Resistance R

g

f = 1 MHz 0.70 1.41 2.30 

Turn-On Delay Time

c

t

d(on)

V

DD

= 50 V, R

L

= 0.6 

I

D

 85 A, V

GEN

= 10 V, R

g

= 2.5 

-1320

ns

Rise Time

c

t

r

-1421

Turn-Off Delay Time

c

t

d(off)

-4466

Fall Time

c

t

f

-1015

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

- - 400 A

Forward Voltage V

SD

I

F

= 85 A, V

GS

= 0 V - 0.9 1.5 V

SQM100N10-10

www.vishay.com

Vishay Siliconix

S12-1845-Rev. B, 30-Jul-12

3

Document Number: 67027

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

40

80

120

160

0 3 6 9 12 15

V

GS

= 10 V thru 4 V

V

GS

=3V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

50

100

150

200

250

0 1632486480

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

T

C

= 125 °C

T

C

= - 55 °C

T

C

= 25 °C

0

1000

2000

3000

4000

5000

6000

7000

8000

9000

0 20406080100

C

iss

C

oss

C

rss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

30

60

90

120

150

180

012345

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

I

D

- Drain Current (A)

-

(Ω) ecnatsi

s

eR-n

O

R

)no(SD

0.000

0.005

0.010

0.015

0.020

0.025

0 20406080100120

V

GS

=4.5V

V

GS

=10V

0

2

4

6

8

10

0 20 40 60 80 100 120 140

I

D

=50A

V

DS

=20V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

SQM100N10-10_GE3

SQM100N10-10_GE3

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