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SQM100N10-10_GE3

SQM100N10-10_GE3
Mfr. #:
SQM100N10-10_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V 100A 375W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Datasheet:
SQM100N10-10_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQM100N10-10_GE3 DatasheetSQM100N10-10_GE3 Datasheet (P4-P6)SQM100N10-10_GE3 Datasheet (P7-P9)SQM100N10-10_GE3 Datasheet (P10)
ECAD Model:
More Information:
SQM100N10-10_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
185 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
SQ
Transistor Type:
1 N-Channel
Width:
9.65 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
115 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
44 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.077603 oz
Tags
SQM100N10-1, SQM100N1, SQM100N, SQM100, SQM10, SQM1, SQM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
***-Wing Technology
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
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***emi
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Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***nell
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310
***icroelectronics
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***icroelectronics SCT
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***ure Electronics
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***ical
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***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 100V, 80A, 175DEG C, 110W;
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Power MOSFETs, 100V, 80A, H2PAK-2, Tape and Reel
***ure Electronics
N-Channel 80 V 0.01 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
***emi
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
***Yang
Trans MOSFET N-CH 80V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:80V; On Resistance
***r Electronics
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 270W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
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***ow.cn
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***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 100V 69A D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Summary of Features: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Part # Mfg. Description Stock Price
SQM100N10-10-GE3
DISTI # V36:1790_09219223		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) 175C MOS
RoHS: Compliant		0
  • 800000:$1.3910
  • 400000:$1.3930
  • 80000:$1.5270
  • 8000:$1.7430
  • 800:$1.7780
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.3709
  • 2400:$1.4244
  • 1600:$1.4994
  • 800:$1.7779
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3)
RoHS: Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
  • 1600:$1.3900
SQM100N10-10_GE3
DISTI # SQM100N10-10-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€1.2900
  • 4800:€1.3900
  • 3200:€1.4900
  • 1600:€1.8900
  • 800:€2.6900
SQM100N10-10_GE3
DISTI # 78-SQM100N10-10_GE3		Vishay IntertechnologiesMOSFET 100V 100A 375W AEC-Q101 Qualified
RoHS: Compliant		800
  • 1:$3.2100
  • 10:$2.8600
  • 100:$2.3400
  • 250:$1.8900
  • 500:$1.7500
  • 800:$1.5900
  • 2400:$1.3500
SQM100N10-10-GE3
DISTI # 78-SQM100N10-10-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3
RoHS: Compliant		0
    SQM100N10-10-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB783
    • 348:$1.3320
    • 121:$1.4430
    • 1:$3.3300
    SQM100N1010GE3Vishay IntertechnologiesPower Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		800
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      Availability
      Stock:
      755
      On Order:
      2738
      Enter Quantity:
      Current price of SQM100N10-10_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $3.21
      $3.21
      10
      $2.86
      $28.60
      100
      $2.34
      $234.00
      250
      $1.89
      $472.50
      500
      $1.75
      $875.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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