 | |  | |
| PartNumber | SQM100N10-10_GE3 | SQM100N10-10-GE3 | SQM100N10-10 |
| Description | MOSFET 100V 100A 375W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 185 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 115 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 44 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.077603 oz | 0.077603 oz | - |
| Part # Aliases | - | SYB85N10-10 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM100N10-10_GE3 | MOSFET 100V 100A 375W AEC-Q101 Qualified | |
| SQM100N10-10-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 | ||
| SQM100N10-10 | New and Original | ||
| SQM100N10-10-GE3 | N-CHANNEL 100-V (D-S) 175C MOS | ||
| SQM100N1010GE3 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Vishay |
SQM100N10-10_GE3 | MOSFET N-CH 100V 100A TO-263 |