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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SQM100N10-10-GE3 DISTI # V36:1790_09219223 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS RoHS: Compliant | 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10_GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 100A TO-263 RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Container: Bulk | Americas - 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3) RoHS: Compliant Min Qty: 800 | Europe - 0 |
|
| SQM100N10-10_GE3 DISTI # 78-SQM100N10-10_GE3 | Vishay Intertechnologies | MOSFET 100V 100A 375W AEC-Q101 Qualified RoHS: Compliant | 800 |
|
| SQM100N10-10-GE3 DISTI # 78-SQM100N10-10-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 RoHS: Compliant | 0 | |
| SQM100N10-10-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 783 |
|
| SQM100N1010GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 800 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-A5D |
MOSFET 100V 100A 375W AEC-Q101 Qualified |
|
|
Mfr.#: SQM100N10-10-GE3 OMO.#: OMO-SQM100N10-10-GE3-045 |
MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 |
|
Mfr.#: SQM100N10-10 OMO.#: OMO-SQM100N10-10-1190 |
New and Original |
|
|
Mfr.#: SQM100N10-10-GE3 OMO.#: OMO-SQM100N10-10-GE3-1190 |
N-CHANNEL 100-V (D-S) 175C MOS |
|
Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-VISHAY |
MOSFET N-CH 100V 100A TO-263 |
|
|
Mfr.#: SQM100N1010GE3 OMO.#: OMO-SQM100N1010GE3-1190 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
