DMG6602SVTQ-7 Datasheet DMG6602SVTQ-7 | P1-P3

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

1 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFORMATION

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

V

(BR)DSS

R

DS(on)

I

D

T

A

= +25

°C

Q1

30V

60mΩ @ V

GS

= 10V

3.4A

100mΩ @ V

GS

= 4.5

V

2.7A

Q2

-30V

95mΩ @ V

GS

= -10V

-2.8A

140mΩ @ V

GS

= -4.5

V

-2.3A

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (R

DS(on)

) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

x Backlighting

x

DC-DC Converters

x

Power Management Functions

Features and Benefits

x

Low On-Resistance

x

Low Input Capacitance

x

Fast Switching Speed

x

Low Input/Output Leakage

x

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

x

Halogen and Antimony Free. “Green” Device (Note 3)

x

Qualified to AEC-Q101 Standards for High Reliability

x

PPAP Capable (Note 4)

Mechanical Data

x

Case: TSOT26

x

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

x

Moisture Sensitivity: Level 1 per J-STD-020

x

Terminals Connections: See Diagram

x

Terminals: Finish – Matte Tin Annealed over Copper L

eadframe.

Solderable per MIL-STD-202, Method 208

x Weight: 0.013 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMG6602SVTQ-7

TSOT26

3,000 / Tape & Reel

DMG6602SVTQ-13

TSOT26

10,000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

2018

2019

2020

Code

X

Y

Z

A

B

C

D

E

F

G

H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

TSOT26

Top View

1

2

3

6

5

4

D1

S1

D2

G1

S2

G2

N-Channel

P-Channel

D1

S1

G1

Q1

D2

S2

G2

Q2

66C = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

66C

YM

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

2 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFORMATION

Maximum Ratings – Q1 (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note

7) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

3.4

2.7

A

Continuous Drain Current (Note

7) V

GS

= 4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

2.7

2.2

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

1.5

A

Pulsed Drain Current (Note 5)

I

DM

25

A

Maximum Ratings – Q2 (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-30

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain C

urrent (Note 7) V

GS

= -10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-2.8

-2.4

A

Continuous Drain Current (Note

7) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-2.3

-2.1

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

-1.5

A

Pulsed Drain Current (Note 7)

I

D

-20

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note

6)

T

A

= +25°C

P

D

0.84

W

T

A

= +70°C

0.52

Thermal Resistance, Junction to Ambient (Note

6)

Steady State

R

T

JA

155

°C/W

t<10s

109

Total Power Dissipation (Note

7)

T

A

= +25°C

P

D

1.27

W

T

A

= +70°C

0.8

Thermal Resistance, Junction to Ambient (Note

7)

Steady State

R

T

JA

102

°C/W

t<10s

71

Thermal Resistance, Junction to Case (Note 7)

R

T

JC

34

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

3 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFORMATION

Electrical Characteristics – Q1 NMOS (@ T

A

= +25°C unless otherwise stated.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

30

-

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

-

1.0

μA

V

DS

= 24V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

1.0

-

2.3

V

DS

= V

GS

, I

D

= 250μA

Static Drain

-Source On-Resistance

R

DS (O

N)

-

38

55

60

100

m

Ω

V

GS

= 10V, I

D

= 3.1A

V

GS

= 4.5V, I

D

= 2A

Forward Transfer Admittance

|Y

fs

|

-

4

-

S

V

DS

= 5V, I

D

= 3.1A

Diode Forward Voltage

V

SD

-

0.8

1

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

290

400

pF

V

DS

= 15V, V

GS

= 0V,

f =

1.2MHz

Output Capacitance

C

oss

-

40

80

Reverse Transfer Capacitance

C

rss

-

40

80

Gate Resistance

R

g

-

1.4

-

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

-

4

6

nC

V

DS

= 15V, V

GS

= 4.5V, I

D

= 3.1A

Total Gate Charge (V

GS

= 10V)

Q

g

-

9

13

V

DS

= 15V, V

GS

= 10V, I

D

= 3A

Gate-Source Charge

Q

gs

-

1.2

-

Gate-Drain Charge

Q

gd

-

1.5

-

Turn-On Delay Time

t

D(on)

-

3

-

ns

V

GS

= 10V, V

DS

= 15V,

R

G

= 3Ω, R

L

= 4.7Ω

Turn-On Rise Time

t

r

-

5

-

Turn-Off Delay Time

t

D(off)

-

13

-

Turn-Off Fall Time

t

f

-

3

-

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

DS

I , DRAIN CURRENT (A)

D

0.0

2.0

4.0

6.0

8.0

10.0

V , GATE SOURCE VOLTAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

I , DRAIN CURRENT (A)

D

0

2

4

6

8

10

012345

V = 5.0V

DS

DMG6602SVTQ-7

DMG6602SVTQ-7

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