DMG6602SVTQ-7 Datasheet DMG6602SVTQ-7 | P4-P6

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

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DMG6602SVTQ

ADVANCE INFORMATION

I , DRAIN SOURCE CURRENT

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R ,DRAIN-SOURCE ON-RESISTANCE( )

DS(ON)

:

0.01

0.1

1

04 8 121620

R ( ) Ave @ V =4.5V

DS(ON) G

:

R ( ) Ave @ V =10V

DS(ON) G

:

I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE( )

DS(ON)

:

0

0.04

0.08

0.12

0.16

02 4 6 810

V= 4.5V

GS

Ave R ( ) @ 150°C

DS(ON)

:

Ave R() @ -55°C

DS(ON)

:

Ave R() @ 25°C

DS(ON)

:

Ave R() @ 85°C

DS(ON)

:

Ave R ( ) @ 125°C

DS(ON)

:

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

q

Fig. 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

(Normalized)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

q

Fig. 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

DS(ON)

0

0.02

0.04

0.06

0.08

0.1

0

0.4

0.8

1.6

1.2

2.4

-50

-25 0 25 50 75 100 125 150

V , GATE THRESHOLD VOLTAGE (V)

GS(th)

T , JUNCTION TEMPERATURE ( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

q

I= 250A

D

P

I= 1mA

D

2.0

I , SOURCE CURRENT (A)

S

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

2

4

6

8

10

V (V) @ V =0V T = 25 C

SD DS A

q

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

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December 2014

DMG6602SVTQ

ADVANCE INFORMATION

f = 1MHz

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

C , JUNCTION CAPACITANCE (pF)

T

CAve (pF)

RSS

10

100

1000

0 5 10 15 20 25 30

CAve (pF)

ISS

CAve (pF)

OSS

0

2

4

6

8

10

0246810

V= 10V

I= 3.0A

DS

D

Q(nC)

g

, TOTAL GATE CHARGE

Fig. 10 Gate Charge

V GATE THRESHOLD VOLTAGE (V)

GS

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 11 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

I , DRAIN CURRENT (A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = 10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100μs

W

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

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December 2014

DMG6602SVTQ

ADVANCE INFORMATION

Electrical Characteristics – Q2 PMOS (@ T

A

= +25°C unless otherwise stated.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

-30

-

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current

I

DSS

-

-1.0

μA

V

DS

= -24V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-1.0

-

-2.3

V

DS

= V

GS

, I

D

= -250μA

Static Drain

-Source On-Resistance

R

DS (ON)

-

73

99

95

140

mΩ

V

GS

= -10V, I

D

= -2.7A

V

GS

= -4.5V, I

D

= -2A

Forward Transfer Admittance

|Y

fs

|

-

6

-

S

V

DS

= -5V, I

D

= -2.7A

Diode Forward Voltage

V

SD

-

-0.8

-1.0

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

350

420

pF

V

DS

= -15V, V

GS

= 0V,

f =

1.2MHz

Output Capacitance

C

oss

-

50

100

Reverse Transfer Capacitance

C

rss

-

45

80

Gate Resistance

R

g

-

17.1

-

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= -4.5V)

Q

g

-

4

6

nC

V

DS

= -15V, V

GS

= -4.5V, I

D

= -3A

Total Gate Charge (V

GS

= -10V)

Q

g

-

7

9

V

DS

= -15V, V

GS

= -10V, I

D

= -3

A

Gate-Source Charge

Q

gs

-

0.9

-

Gate-Drain Charge

Q

gd

-

1.2

-

Turn-On Delay Time

t

D(on)

-

4.8

-

ns

V

GS

= -10V, V

DS

= -15V,

R

G

= 6Ω, R

L

= 15Ω

Turn-On Rise Time

t

r

-

7.3

-

Turn-Off Delay Time

t

D(off)

-

20

-

Turn-Off Fall Time

t

f

-

13

-

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

Fig. 12 Typical Output Characteristics

DS

0.0

2.0

4.0

6.0

8.0

I , DRAIN CURRENT

D

V , GATE SOURCE VOLTAGE(V)

Fig. 13 Typical Transfer Characteristics

GS

I , DRAIN CURRENT (A)

D

0

2

4

6

8

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

DMG6602SVTQ-7

DMG6602SVTQ-7

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