NTD32N06-1G

Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1 Publication Order Number:
NTD32N06/D
NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Smaller Package than MTB36N06V
Lower R
DS(on)
Lower V
DS(on)
Lower Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 M) V
DGR
60 Vdc
Gate−to−Source Voltage, Continuous
− Non−Repetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
10 s)
I
D
I
D
I
DM
32
22
90
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
93.75
0.625
2.88
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C (Note 3)
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25 )
E
AS
313 mJ
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
JC
R
JA
R
JA
1.6
52
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
3. Repetitive rating; pulse width limited by maximum junction temperature.
N−Channel
D
S
G
60 V 26 m
R
DS(on)
TYP
32 A
I
D
MAXV
(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
32N06 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
1
2
3
4
DPAK−3
CASE 369D
STYLE 2
1
2
3
4
MARKING
DIAGRAMS
AYWW
32N06
1
Gate
3
Source
2
Drain
4
Drain
AYWW
32N06
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
NTD32N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70
41.6
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
1.0
10
Adc
Gate−Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
±100 nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
2.8
7.0
4.0
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 16 Adc)
R
DS(on)
21 26
m
Static Drain−to−Source On−Voltage (Note 4)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 32 Adc)
(V
GS
= 10 Vdc, I
D
= 16 Adc, T
J
= 150°C)
V
DS(on)
0.417
0.680
0.633
0.62
Vdc
Forward Transconductance (Note 4) (V
DS
= 6 Vdc, I
D
= 16 Adc) g
FS
21.1 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0Vd
C
iss
1231 1725 pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz
)
C
oss
346 485
Transfer Capacitance
f
=
1
.
0
MHz)
C
rss
77 160
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(on)
10 25 ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 32 Adc,
V
GS
=10Vdc
t
r
84 180
Turn−Off Delay Time
V
GS
= 10 Vdc,
R
G
= 9.1 ) (Note 4)
t
d(off)
31 70
Fall Time
R
G
9.1
)
(Note
4)
t
f
93 200
Gate Charge
(V 48 Vd I 32 Ad
Q
T
33 60 nC
(V
DS
= 48 Vdc, I
D
= 32 Adc,
V
GS
= 10 Vdc
)
(
Note 4
)
Q
1
6.0
V
GS
=
10
Vdc)
(Note
4)
Q
2
15
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 32 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
0.89
0.96
0.75
1.0
Vdc
Reverse Recovery Time
(I 32 Ad V 0Vd
t
rr
52
ns
(I
S
= 32 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
s
)
(
Note 4
)
t
a
37
dI
S
/dt
=
100
A/s)
(Note
4)
t
b
14.3
Reverse Recovery Stored Charge Q
RR
0.095 C
4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTD32N06
http://onsemi.com
3
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
10000
40
20
50
10
30
0
60
0.021
0
50
4
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.038
0.034
0.03
403020
0.026
0.022
0.018
0.014
0.01
10 50 60
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
−50 50250−25 75 125100
3 4.6 54.23.8 5.43.4 7
0304020 5010 60
0.019
0.022
0.02
0.018
0.023
0.024
040503020 6010
V
GS
= 10 V
3
10
30
40
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6.5 V
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
DS
> = 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
5.8 6.2 6.6
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
150 175
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
I
D
= 16 A
V
GS
= 10 V

NTD32N06-1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 32A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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