NTD32N06
http://onsemi.com
4
V
GS
1000
100
10
1
0.1
1000
100
10
12
10
8
6
4
2
0
350
300
250
200
150
100
50
0
32
28
24
20
16
12
0
10
3200
2800
10
2400
2000
155020
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
C, CAPACITANCE (pF)
1600
1200
800
400
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE ()
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
25 0 16 2012824436
1 10 100 0.6 0.76 0.880.720.68 0.920.64 0.96
0.1 10 1001 25 125 15010075 17550
28 32
I
D
= 32 A
T
J
= 25°C
V
GS
V
GS
= 0 V
V
DS
= 0 V T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
8
4
0.8 0.84
Q
T
Q
2
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DS
= 30 V
I
D
= 32 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 25°C
I
D
= 32 A
10 ms
1 ms
100 s
dc
t
r
t
d(off)
t
d(on)
t
f
V
DS
Mounted on 3″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
with one die operating,10 s max
R
DS(on)
Limit
Thermal Limit
Package Limit
