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MIXA40W1200TML
P1-P3
P4-P6
© 2011 IXYS All rights reser
ved
4 - 6
20110118b
MIXA40W1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
XXXXXX.....
YWWx
XXX...
Logo
UL
Part name
Date Code
Prod. Code
Part number
M
= Module
I
= IGBT
X
= XPT
A
= standard
40
= Current Rating [A]
W
= 6-Pack
1200
= Rev
erse V
oltage [V]
T
= NTC
ML
= E1-Pack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA 40
W 1200
TML
MIXA40W1200TML
Box
10
510628
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
11, 12
15, 16
19, 20
22
21
2
1
18
17
4
3
14
13
6
5
10, 23
9, 24
NTC
8
7
© 2011 IXYS All rights reser
ved
5 - 6
20110118b
MIXA40W1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
0
1
2
3
0
10
20
30
40
50
60
70
0
20
40
60
80
0
2
4
6
8
10
0
1
2
3
4
5
0
1
0
2
0
3
0
4
0
5
0
6
0
7
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
10
20
30
40
50
60
70
0
2
0
4
0
60
80
1
0
0
12
0
14
0
0
5
10
15
20
13 V
2
0
4
0
6
0
80
3
4
5
6
E
[mJ]
E
on
Fig. 1 Typ. output characteristi
cs
V
CE
[V]
I
C
[A]
V
G
E
= 15 V
17 V
19 V
Fig. 2 Typ. output characteri
stics
I
C
[A]
Fig. 3 Typ. tranfer characteristi
cs
V
GE
[V]
Fig. 4
Typ. turn-on gate charge
Fig. 5 Typ. sw
itching energy vs. collecto
r current
E
off
Fig. 6 Typ. sw
itching energy
vs. gate resi
stance
R
G
[
Ω
]
E
[mJ]
I
C
[A]
E
on
E
off
T
VJ
= 125°C
T
VJ
= 25°C
V
G
E
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
I
C
=
35 A
V
CE
= 600 V
R
G
=
27
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
=
35 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
IGBT
T1 -
T6
© 2011 IXYS All rights reser
ved
6 - 6
20110118b
MIXA40W1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Diode D1 - D6
300
4
00
500
600
700
800
900
1000
1100
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
Q
rr
[µC]
I
F
[A]
V
F
[V]
di
F
/dt
[A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
15 A
30 A
60 A
Fig. 7 Typ.
Forward current versus V
F
Fig. 8 Typ.
reverse recov.charge
Q
rr
vs. di/dt
300
400
500
600
700
800
900
1000
1100
0
10
20
30
40
50
60
70
I
RR
[A]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
15 A
30 A
60 A
Fig. 9 Typ.
peak reverse current I
RM
vs. di/dt
300
400
500
600
70
0
800
900
1000
1100
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt
[A/µs]
15 A
30 A
60 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ
. recovery time t
rr
versus di/dt
Fig. 11 Typ
. recovery energ
y E
rec
versus di/dt
300
400
500
600
700
800
900
1000
1100
0.0
0.4
0.8
1.2
1.6
2.0
E
rec
[mJ]
di
F
/dt
[A/µs]
T
VJ
= 125°C
V
R
= 600 V
15 A
30 A
60 A
0.001
0.01
0.1
1
10
0.01
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transien
t
thermal imp
edance
Diode
IGBT
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.152
0.0025
0.341
0.0025
2
0.072
0.03
0.217
0.03
3
0.308
0.03
0.348
0.03
4
0.108
0.08
0.294
0.08
P1-P3
P4-P6
MIXA40W1200TML
Mfr. #:
Buy MIXA40W1200TML
Manufacturer:
Littelfuse
Description:
IGBT Modules Six-Pack XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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