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IXTK88N30P

P1-P3P4-P5
© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 300 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 300 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25° C88A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25° C, pulse width limited by T
JM
220 A
I
AR
T
C
= 25° C60A
E
AR
T
C
= 25° C60mJ
E
AS
T
C
= 25° C 2.0 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
10 V/ns
T
J
≤ 150° C, R
G
= 4 Ω
P
D
T
C
= 25° C 600 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 s 260 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-264 10 g
TO-3P & TO-268 5.5 g
G = Gate D = Drain
S = Source TAB = Drain
DS99129E(12/05)
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA 300 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
100 µA
V
GS
= 0 V T
J
= 125° C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
40 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-264 (IXTK)
TO-247 (IXTH)
D (TAB)
D (TAB)
G
D
S
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
= 300 V
I
D25
= 88 A
R
DS(on)
≤≤
≤≤
≤ 40 m
ΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
G
D
S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 45 60 S
C
iss
6300 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 950 pF
C
rss
190 pF
t
d(on)
25 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A 24 ns
t
d(off)
R
G
= 3.3 Ω (External) 96 ns
t
f
25 ns
Q
g(on)
180 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
44 nC
Q
gd
90 nC
R
thJC
0.21° C/W
R
thCS
TO-247 and TO-3P 0.21 ° C/W
R
thCS
TO-264 0.15 ° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 88 A
I
SM
Repetitive 220 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 250 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 3.3 µC
Characteristic Curves
Fig. 2. Extended Output Characteristics
@ 25
ºC
0
20
40
60
80
100
120
140
160
180
200
02468101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
00.511.522.533.54
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
© 2006 IXYS All rights reserved
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
4 4.5 5 5.5 6 6.5 7 7.5 8
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 3. Output Characteris tics
@ 125
º
C
0
10
20
30
40
50
60
70
80
90
0123456789
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs . Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( on)
- Normalized
I
D
= 88A
I
D
= 44A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
R
D S ( on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
P1-P3P4-P5

IXTK88N30P

Mfr. #:
Buy IXTK88N30P
Manufacturer:
Littelfuse
Description:
MOSFET 88 Amps 300V 0.04 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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